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Número de pieza | IRF620 | |
Descripción | N-Channel Power MOSFET / Transistor | |
Fabricantes | Fairchild Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IRF620 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! Data Sheet
January 2002
IRF620
5.0A, 200V, 0.800 Ohm, N-Channel
Power MOSFET
This N-Channel enhancement mode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy in the breakdown avalanche mode of operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA9600.
Ordering Information
PART NUMBER
IRF620
PACKAGE
TO-220AB
BRAND
IRF620
NOTE: When ordering, use the entire part number.
Features
• 5.0A, 200V
• rDS(ON) = 0.800Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
JEDEC TO-220AB
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
©2002 Fairchild Semiconductor Corporation
IRF620 Rev. B
1 page IRF620
Typical Performance Curves Unless Otherwise Specified (Continued)
1.25
ID = 250µA
1.15
1.05
0.95
0.85
0.75
-40
0 40 80 120
TJ, JUNCTION TEMPERATURE (oC)
160
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
1000
800
600
400
200
0
0
CISS
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS ≈ CDS + CGD
COSS
CRSS
10 20 30 40
VDS, DRAIN TO SOURCE VOLTAGE (V)
50
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
4 VDS > ID(ON) x rDS(ON) MAX
3
2
TJ = -55oC
TJ = 25oC
TJ = 125oC
1
0
0 2 4 6 8 10
ID, DRAIN CURRENT (A)
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
PULSE DURATION = 80µs
100 DUTY CYCLE = 0.5% MAX
10
TJ = 25oC
TJ = 150oC
TJ = 150oC
TJ = 25oC
1
0 123
VSD, SOURCE TO DRAIN VOLTAGE (V)
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
4
20
ID = 6A
15
10
5
VDS = 40V
V2D0S = 100V
VDS = 160V
0
0 4 8 12 16 20
Qg, GATE CHARGE (nC)
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
©2002 Fairchild Semiconductor Corporation
IRF620 Rev. B
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet IRF620.PDF ] |
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