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PDF IRF6156 Data sheet ( Hoja de datos )
| Número de pieza | IRF6156 | |
| Descripción | FlipFET Power MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IRF6156 (archivo pdf) en la parte inferior de esta página. Total 13 Páginas | ||
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l Ultra Low RSS(on) per Footprint Area
l Low Thermal Resistance
l Bi-Directional N-Channel Switch
l Super Low Profile (<.8mm)
l Available Tested on Tape & Reel
l ESD Protection Diode
VSS
20V
Description
True chip-scale packaging is available from International Recti-
fier. Through the use of advanced processing techniques and a
unique packaging concept, extremely low on-resistance and the
highest power densities in the industry have been made available
for battery and load management applications. These benefits,
combined with the ruggedized device design that International
Rectifier is well known for, provide the designer with an
extremely efficient and reliable device.
The FlipFET package, is one-fifth the footprint of a comparable
TSSOP-8 package and has a profile of less than .8mm. Com-
bined with the low thermal resistance of the die level device, this
makes the FlipFET the best device for applications where
printed circuit board space is at a premium and in extremely thin
application environments such as battery packs, mobile phones
and PCMCIA cards.
PD - 94592A
IRF6156
FlipFET Power MOSFET
RSS(on) max
:40m @VGS1,2 = 4.5V
:60m @VGS1,2 = 2.5V
IS
±6.5
±5.2
Absolute Maximum Ratings
Parameter
VSS
IS @ TA = 25°C
IS @ TA = 70°C
ISM
PD @TA = 25°C
PD @TA = 70°C
Source-to-Source Voltage
eContinuous Current, VGS1 = VGS2 = 4.5V
eContinuous Current, VGS1 = VGS2 = 4.5V
cPulsed Current
ePower Dissipation
ePower Dissipation
VGS
TJ
TSTG
Linear Derating Factor
Gate-to-Source Voltage
Operating Junction and
Storage Temperature Range
Thermal Resistance
Parameter
eRθJA Junction-to-Ambient
RθJ-PCB
Junction-to-PCB
Max.
20
±6.5
±5.2
33
2.5
1.6
20
±12
-55 to + 150
Units
V
A
W
mW/°C
V
°C
Typ.
–––
35
Max.
50
–––
Units
°C/W
www.irf.com
1
09/25/03
1 page  
IRF6156
2.0
ID = 6.5A
VGS = 4.5V
1.5
1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 8. Normalized On-Resistance
vs. Temperature.
7
6
5
4
3
2
1
0
25
50 75 100 125
TC , Case Temperature (°C)
150
Fig 9. Maximum Source Current vs.
Case Temperature.
Q1 S1
G1
Q2
To Drain
G2 S2
To Source
Fig 10a. VGS(th) is symmetrical and
can be measured when connected
as shown on figure 10a.
www.irf.com
Q2 S2
G2
Q1
To Drain
G1 S1
To Source
Fig 10b. VGS(th) is symmetrical and
can be measured when connected
as shown on figure 10b.
5
5 Page 
IRF6156
4.5V
RS= 10ohm
S2
VGS G2
6ohm
G1
S1
4.5V
+
10V
-
S2
6ohm
VGS
G2
G1
S1
RS = 10ohm
-
10V
+
Fig 21a
Fig 21b
Switching times are symmetrical and can be measured as shown
in either figures 21a or 21b.
VGS
10%
td(on) tr
90%
VDS
td(off) tf
www.irf.com
Fig 21c. Switching Time Waveforms.
11
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet IRF6156.PDF ] | |
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