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PDF IRF614 Data sheet ( Hoja de datos )
| Número de pieza | IRF614 | |
| Descripción | 2.0A/ 250V/ 2.0 Ohm/ N-Channel Power MOSFET | |
| Fabricantes | Intersil Corporation | |
| Logotipo |  |
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January 1998
Features
• 2.0A, 250V
• rDS(ON) = 2.0Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRF614
TO-220AB
IRF614
NOTE: When ordering, use the entire part number.
IRF614
2.0A, 250V, 2.0 Ohm,
N-Channel Power MOSFET
Description
This is an N-Channel enhancement mode silicon gate power
field effect transistor. It is an advanced power MOSFET
designed, tested, and guaranteed to withstand a specified
level of energy in the breakdown avalanche mode of opera-
tion. This power MOSFET is designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
This type can be operated directly from integrated circuits.
Formerly developmental type TA17443.
Symbol
D
G
S
Packaging
JEDEC TO-220AB
SOURCE
DRAIN
GATE
DRAIN (FLANGE)
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
1
File Number 3273.1
1 page  
IRF614
Typical Performance Curves Unless Otherwise Specified (Continued)
10 3.0
VGS = 10V, ID = 2.5A
8 2.4
6 1.8
VGS = 10V
4 1.2
VGS = 20V
2 0.6
0
0 2 4 6 8 10
ID, DRAIN CURRENT (A)
NOTE: Heating effect of 2.0µs pulse is minimal.
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
0.2
-40 0 40 80 120
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
160
1.25
ID = 250mA
1.15
1.05
0.95
0.85
0.75
-40 0 40 80 120
TJ, JUNCTION TEMPERATURE (oC)
160
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
500
VGS = 0V, f = 1MHz
CISS = CGS + CGD
400 CRSS = CGD
COSS = CDS + CGD
300
CISS
200
COSS
100
CRSS
0 1 10 100
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
2.0 VDS = 2 x VGS MAX, PULSE TEST = 80µs
1.6
TJ = 25oC
1.2
TJ = 150oC
0.8
0.4
0
0 0.8 1.6 2.4 3.2 4.0
ID, DRAIN CURRENT (A)
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
10
1
0.1 TJ = 150oC
TJ = 25oC
10-2
0
0.4 0.8
1.2 1.6
VSD, SOURCE TO DRAIN VOLTAGE (V)
2.0
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet IRF614.PDF ] | |
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