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PDF IRF5NJ6215 Data sheet ( Hoja de datos )

Número de pieza IRF5NJ6215
Descripción POWER MOSFET P-CHANNEL(Vdss=-150V/ Rds(on)=0.29ohm/ Id=-11A)
Fabricantes International Rectifier 
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PD - 94284A
HEXFET® POWER MOSFET
SURFACE MOUNT (SMD-0.5)
IRF5NJ6215
150V, P-CHANNEL
Product Summary
Part Number
IRF5NJ6215
BVDSS
-150V
RDS(on)
0.29
ID
-11A
Fifth Generation HEXFET® power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance
per silicon unit area. This benefit, combined with the
fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient device
for use in a wide variety of applications.
These devices are well-suited for applications such
as switching power supplies, motor controls, invert-
ers, choppers, audio amplifiers and high-energy pulse
circuits.
SMD-0.5
Features:
n Low RDS(on)
n Avalanche Energy Ratings
n Dynamic dv/dt Rating
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Surface Mount
n Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = -10V, TC = 25°C Continuous Drain Current
ID @ VGS = -10V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
TJ
TSTG
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
For footnotes refer to the last page
www.irf.com
-11
-7.2
-44
75
0.6
±20
130
-11
7.5
10
-55 to 150
300 (for 5 s)
1.0 (Typical)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
oC
g
1
9/11/01

1 page




IRF5NJ6215 pdf
IRF5NJ6215
12
8
4
0
25 50 75 100 125 150
TC , Case Temperature ( °C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
VGS
RG
RD
D.U.T.
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
-
+ VDD
Fig 10a. Switching Time Test Circuit
VGS
10%
td(on) tr
td(off) tf
90%
VDS
Fig 10b. Switching Time Waveforms
10
1 D = 0.50
0.20
0.10
0.05
0.1
0.02
0.01
0.01
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
PDM
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak TJ = P DM x ZthJC + TC
0.0001
0.001
0.01
t1, Rectangular Pulse Duration (sec)
0.1
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
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