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PDF IRF5803D2 Data sheet ( Hoja de datos )
| Número de pieza | IRF5803D2 | |
| Descripción | FETKY MOSFET & Schottky Diode(Vdss=-40V/ Rds(on)=112ohm) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD- 94016
IRF5803D2
FETKYTM MOSFET & Schottky Diode
l Co-packaged HEXFET Power
MOSFET and Schottky Diode
l Ideal For Buck Regulator Applications
l P-Channel HEXFET
l Low VF Schottky Rectifier
l SO-8 Footprint
A
A
S
G
Description
The FETKYTM family of Co-packaged HEXFETs and
Schottky diodes offer the designer an innovative board
space saving solution for switching regulator and
power management applications. HEXFETs utilize
advanced processing techniques to achieve extremely
low on-resistance per silicon area. Combining this
technology with International Rectifier's low forward
drop Schottky rectifiers results in an extremely efficient
device suitable for use in a wide variety of portable
electronics applications.
18
27
36
45
Top View
K VDSS = -40V
K
D RDS(on) = 112mΩ
D
Schottky Vf = 0.51V
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics. The
SO-8 package is designed for vapor phase, infrared or
wave soldering techniques.
Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted)
Parameter
Maximum
ID @ TA = 25°C
Continuous Drain Current, VGS @ -10V
-3.4
ID @ TA = 70°C
IDM
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current ➀
-2.7
-27
PD @TA = 25°C
Power Dissipation
2.0
PD @TA = 70°C
Power Dissipation
1.3
Linear Derating Factor
16
VGS
TJ, TSTG
Gate-to-Source Voltage
Junction and Storage Temperature Range
± 20
-55 to +150
SO-8
Units
A
W
mW/°C
V
°C
Thermal Resistance
Symbol
RθJL
RθJA
RθJA
Parameter
Junction-to-Drain Lead, MOSFET
Junction-to-Ambient , MOSFET
Junction-to-Ambient , SCHOTTKY
Typ.
–––
–––
–––
Notes:
Repetitive rating – pulse width limited by max. junction temperature (see fig. 11)
Pulse width ≤ 400µs – duty cycle ≤ 2%
Surface mounted on 1 inch square copper board, t ≤ 10sec.
Max.
20
62.5
62.5
Units
°C/W
www.irf.com
1
03/05/01
1 page  
Power Mosfet Characteristics
IRF5803D2
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
25
50 75 100 125
TC , Case Temperature ( °C)
150
VDS
VGS
RG
RD
D.U.T.
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
-
+ VDD
Fig 10a. Switching Time Test Circuit
VGS
10%
td(on) tr
td(off) tf
Fig 9. Maximum Drain Current Vs.
Case Temperature
90%
VDS
Fig 10b. Switching Time Waveforms
100
D = 0.50
0.20
10
0.10
0.05
0.02
0.01
1
0.1
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
PDM
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak TJ = P DM x ZthJA + TA
0.01 0.1
1
t1, Rectangular Pulse Duration (sec)
10 100
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
5
5 Page 
SO-8 Tape and Reel
T ER M IN AL N U M B E R 1
IRF5803D2
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIREC TIO N
NOTES:
1 . C O N TR O L L IN G D IM E N S IO N : M IL L IM E TE R .
2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E TE R S (IN C H E S ).
3 . O U T L IN E C O N F O R M S TO E IA -4 8 1 & E IA -5 4 1 .
330.00
(12.992)
MAX.
NOTES :
1. C O N T R O LLIN G D IM E N SIO N : M ILL IM E TE R .
2. O U TL IN E C O N F O R M S TO EIA -481 & E IA -541.
14.40 ( .566 )
12.40 ( .488 )
Data and specifications subject to change without notice.
This product has been designed and qualified for the consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.03/01
www.irf.com
11
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| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet IRF5803D2.PDF ] | |
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