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PDF IRF5800 Data sheet ( Hoja de datos )
| Número de pieza | IRF5800 | |
| Descripción | Power MOSFET(Vdss=-30V/ Rds(on)=0.085ohm) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IRF5800 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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l Ultra Low On-Resistance
l P-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l Low Gate Charge
D
D
G
Description
These P-channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This benefit
provides the designer with an extremely efficient device for
use in battery and load management applications.
The TSOP-6 package with its customized leadframe
produces a HEXFET® power MOSFET with RDS(on) 60%
less than a similar size SOT-23. This package is ideal for
applications where printed circuit board space is at a
premium. It's unique thermal design and RDS(on) reduction
enables a current-handling increase of nearly 300%
compared to the SOT-23.
PD - 93850
IRF5800
HEXFET® Power MOSFET
A
1 6D
VDSS = -30V
2 5D
3 4S
Top View
RDS(on) = 0.085Ω
TSOP-6
Absolute Maximum Ratings
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
EAS
VGS
TJ, TSTG
Parameter
Drain- Source Voltage
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy
Gate-to-Source Voltage
Junction and Storage Temperature Range
Thermal Resistance
RθJA
www.irf.com
Parameter
Maximum Junction-to-Ambient
Max.
-30
-4.0
-3.2
-32
2.0
1.3
0.016
20.6
± 20
-55 to + 150
Max.
62.5
Units
V
A
W
W/°C
mJ
V
°C
Units
°C/W
1
2/8/00
1 page  
IRF5800
4.0 50
ID
TOP
-1.8A
-2.5A
40 BOTTOM -4.0A
3.0
30
2.0
20
1.0
10
0.0
25
50 75 100 125
TC , Case Temperature ( °C)
150
0
25 50 75 100 125 150
Starting TJ, Junction Temperature ( °C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10. Maximum Avalanche Energy
Vs. Drain Current
100
D = 0.50
0.20
10
0.10
0.05
0.02
1 0.01
0.1
0.00001
PDM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
0.0001
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.001
0.01
0.1
t1, Rectangular Pulse Duration (sec)
1
10
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRF5800.PDF ] | |
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