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PDF IRF540 Data sheet ( Hoja de datos )

Número de pieza IRF540
Descripción N - CHANNEL100V - 00.50ohm - 30A - TO-220/TO-220FI POWER MOSFET
Fabricantes STMicroelectronics 
Logotipo STMicroelectronics Logotipo

IRF540 image


1. 100V, Power MOSFET - IR






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No Preview Available ! IRF540 Hoja de datos, Descripción, Manual

IRF540
N-CHANNEL 100V - 0.055 - 22A TO-220
LOW GATE CHARGE STripFET™ II POWER MOSFET
TYPE
VDSS
RDS(on)
IRF540
100 V <0.077
s TYPICAL RDS(on) = 0.055
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s LOW GATE CHARGE
s APPLICATION ORIENTED
CHARACTERIZATION
ID
22 A
DESCRIPTION
This MOSFET series realized with STMicroelectronics
unique STripFET process has specifically been designed
to minimize input capacitance and gate charge. It is
therefore suitable as primary switch in advanced high-
efficiency, high-frequency isolated DC-DC converters for
Telecom and Computer applications. It is also intended
for any applications with low gate drive requirements.
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH-EFFICIENCY DC-DC CONVERTERS
s UPS AND MOTOR CONTROL
Ordering Information
IRF540
SALES TYPE
MARKING
IRF540&
PACKAGE
TO-220
PACKAGING
TUBE
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM(•) Drain Current (pulsed)
Ptot Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
EAS (2) Single Pulse Avalanche Energy
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area.
Value
100
100
± 20
22
15
88
85
0.57
9
220
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
-55 to 175
°C
1) ISD 22A, di/dt 300A/µs, VDD V(BR)DSS, Tj TJMAX
(2) Starting Tj = 25 oC, ID = 12A, VDD = 30V
February 2003
NEW DATASHEET ACCORDING TO PCN DSG/CT/1C16 MARKING: IRF540 &
1/8

1 page




IRF540 pdf
Normalized Gate Threshold Voltage vs Temperature
IRF540
Normalized on Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized Breakdown Voltage vs Temperature
..
5/8

5 Page










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