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PDF IRF530NS Data sheet ( Hoja de datos )
| Número de pieza | IRF530NS | |
| Descripción | Power MOSFET(Vdss=100V/ Rds(on)=0.11ohm/ Id=17A) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IRF530NS (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
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l Advanced Process Technology
l Surface Mount (IRF530NS)
l Low-profile through-hole (IRF530NL)
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
G
PD - 91352A
IRF530NS/L
HEXFET® Power MOSFET
D
VDSS =100V
RDS(on) = 0.11Ω
S ID = 17A
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and ruggedized device design
that HEXFET Power MOSFETs are well known for, provides the designer with
an extremely efficient and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of accommodating die
sizes up to HEX-4. It provides the highest power capability and the lowest
possible on-resistance in any existing surface mount package. The D2Pak is
suitable for high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface mount application.
The through-hole version (IRF530NL) is available for low-profile applications.
D 2 Pak
T O-262
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current•9.0
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
RθJC
RθJA
www.irf.com
Parameter
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
Max.
17
12
60
3.8
79
0.53
± 20
150
A
7.9
5.0
-55 to + 175
300 (1.6mm from case )
Typ.
–––
–––
Max.
1.9
40
Units
A
W
W
W/°C
V
mJ
mJ
V/ns
°C
Units
°C/W
1
5/13/98
1 page  
20
15
10
5
0
25 50 75 100 125 150 175
TC , Case Temperature ( °C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
10
IRF530NS/L
VDS
VGS
RG
RD
D.U.T.
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
1 D = 0.50
0.20
0.10
0.05
0.1 0.02
0.01
0.01
0.00001
PDM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
0.0001
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.001
0.01
t1, Rectangular Pulse Duration (sec)
0.1
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IRF530NS.PDF ] | |
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