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Número de pieza | IRF530FP | |
Descripción | N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | |
Fabricantes | STMicroelectronics | |
Logotipo | ||
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No Preview Available ! IRF530FP
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
TYPE
IRF530FP
VDSS
100 V
RDS(on)
< 0.16 Ω
ID
10 A
s TYPICAL RDS(on) = 0.12 Ω
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100oC
s LOW GATE CHARGE
s AVALANCHE RUGGED TECHNOLOGY
s APPLICATION ORIENTED
CHARACTERIZATION
s HIGH CURRENT CAPABILITY
s 175oC OPERATING TEMPERATURE
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s DC-DC & DC-AC CONVERTER
s AUTOMOTIVE ENVRONMENT (INJECTION,
ABS, AIR-BAG, LAMP DRIVERS, Etc)
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
VGS
ID
ID
Drain- gate Voltage (RGS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
IDM(•) Drain Current (pulsed)
Ptot Total Dissipation at Tc = 25 oC
Derating Factor
VISO Insulation Withstand Voltage (DC)
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
March 1998
Value
100
100
± 20
10
7
64
35
0.23
2000
-65 to 175
175
Unit
V
V
V
A
A
A
W
W/oC
V
oC
oC
1/5
1 page IRF530FP
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1998 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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5/5
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet IRF530FP.PDF ] |
Número de pieza | Descripción | Fabricantes |
IRF530F1 | Trans MOSFET N-CH 100V 10A 3-Pin(3+Tab) TO-220FP | New Jersey Semiconductor |
IRF530FI | N-Channel MOSFET Transistor | Inchange Semiconductor |
IRF530FI | N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | STMicroelectronics |
IRF530FP | N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | STMicroelectronics |
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