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PDF IRF421 Data sheet ( Hoja de datos )
| Número de pieza | IRF421 | |
| Descripción | 2.2A and 2.5A/ 450V and 500V/ 3.0 and 4.0 Ohm/ N-Channel Power MOSFETs | |
| Fabricantes | Intersil Corporation | |
| Logotipo |  |
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Semiconductor
July 1998
IRF420, IRF421,
IRF422, IRF423
2.2A and 2.5A, 450V and 500V, 3.0 and 4.0 Ohm,
N-Channel Power MOSFETs
Features
• 2.2A and 2.5A, 450V and 500V
• rDS(ON) = 3.0Ω and 4.0Ω
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRF420
TO-204AA
IRF420
IRF421
TO-204AA
IRF421
IRF422
TO-204AA
IRF422
IRF423
TO-204AA
IRF423
NOTE: When ordering, use the entire part number.
Description
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching conver-
tors, motor drivers, relay drivers, and drivers for high power
bipolar switching transistors requiring high speed and low
gate drive power. These types can be operated directly from
integrated circuits.
Formerly developmental type TA17405.
Symbol
D
G
S
Packaging
DRAIN
(FLANGE)
JEDEC TO-204AA
GATE (PIN 1)
SOURCE (PIN 2)
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1998
5-1
File Number 1571.3
1 page  
IRF420, IRF421, IRF422, IRF423
Typical Performance Curves TC = 25oC Unless Otherwise Specified (Continued)
5
80µs PULSE TEST
4
3
VGS = 10V
VGS = 6V
10
VDS ≥ 50V
80µs PULSE TEST
TJ = 150oC
1
TJ = 25oC
2 VGS = 5.5V
1 VGS = 5V
VGS = 4V
VGS = 4.5V
0
0 4 8 12 16 20
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 6. SATURATION CHARACTERISTICS
0.1
0.01
0
2 46 8
VGS, GATE TO SOURCE VOLTAGE (V)
FIGURE 7. TRANSFER CHARACTERISTICS
10
10
80µs PULSE TEST
8
3.0
ID = 2.5A
VGS = 10V
2.4
6
4 VGS = 10V
VGS = 20V
2
1.8
1.2
0.6
0
0 2 4 6 8 10
ID, DRAIN CURRENT (A)
NOTE: Heating effect of 2µs pulse is minimal.
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 9. NORMALIZED DRAIN TO SOURCE vs JUNCTION
TEMPERATURE
1.25
ID = 250µA
1.15
1.05
0.95
1000
800
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS
COSS
=
≈
CGD
CDS
+
CGS
600
400
CISS
0.85
0.75
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
200
0
1
CRSS
COSS
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
102
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
5-5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet IRF421.PDF ] | |
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