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PDF IRF3707S Data sheet ( Hoja de datos )
| Número de pieza | IRF3707S | |
| Descripción | Power MOSFET(Vdss=30V/ Rds(on)max=12.5mohm/ Id=62A) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD - 93937B
SMPS MOSFET
Applications
l High Frequency DC-DC Isolated
Converters with Synchronous Rectification
for Telecom and Industrial use
l High Frequency Buck Converters for
Computer Processor Power
VDSS
30V
IRF3707
IRF3707S
IRF3707L
HEXFET® Power MOSFET
RDS(on) max
12.5mΩ
ID
62A
Benefits
l Ultra-Low Gate Impedance
l Very Low RDS(on)
l Fully Characterized Avalanche Voltage
and Current
TO-220AB
IRF3707
D2Pak
IRF3707S
TO-262
IRF3707L
Absolute Maximum Ratings
Symbol
VDS
VGS
ID @ TC = 25°C
ID @ TC = 70°C
IDM
PD @TC = 25°C
PD @TC = 70°C
TJ , TSTG
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Junction and Storage Temperature Range
Max.
30
± 20
62
52
248
87
61
0.59
-55 to + 175
Units
V
V
A
W
W
mW/°C
°C
Thermal Resistance
RθJC
RθCS
RθJA
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient (PCB mount)*
Typ.
–––
0.50
–––
–––
* When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques refer to application note #AN-994
Max.
1.73
–––
62
40
Units
°C/W
Notes through are on page 10
www.irf.com
1
8/22/00
1 page  
IRF3707/3707S/3707L
70
60
50
40
30
20
10
0
25
50 75 100 125 150
TC , Case Temperature ( °C)
175
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
VGS
RG
RD
D.U.T.
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
10
1 D = 0.50
0.20
0.10
0.05
0.1 0.02
0.01
0.01
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
PDM
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
t1, Rectangular Pulse Duration (sec)
0.1
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
5
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IRF3707S.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| IRF3707 | Power MOSFET(Vdss=30V/ Rds(on)max=12.5mohm/ Id=62A) | International Rectifier |
| IRF3707L | Power MOSFET(Vdss=30V/ Rds(on)max=12.5mohm/ Id=62A) | International Rectifier |
| IRF3707LPBF | HEXFET Power MOSFET | International Rectifier |
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