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PDF IRF350 Data sheet ( Hoja de datos )
| Número de pieza | IRF350 | |
| Descripción | 15A/ 400V/ 0.300 Ohm/ N-Channel Power MOSFET | |
| Fabricantes | Intersil Corporation | |
| Logotipo |  |
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Data Sheet
IRF350
March 1999 File Number 1826.3
15A, 400V, 0.300 Ohm, N-Channel Power
MOSFET
This is an N-Channel enhancement mode silicon gate power
field effect transistor designed for applications such as
switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
They can be operated directly from integrated circuits.
Formerly developmental type TA9399.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRF350
TO-204AA
IRF350
NOTE: When ordering, include the entire part number.
Features
• 15A, 400V
• rDS(ON) = 0.300Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
DRAIN
(FLANGE)
JEDEC TO-204AA
TOP VIEW
GATE (PIN 1)
SOURCE (PIN 2)
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
1 page  
IRF350
Typical Performance Curves Unless Otherwise Specified (Continued)
1.25
1.15
1.05
0.95
0.85
0.75
-40
0 40 80 120
TJ, JUNCTION TEMPERATURE (oC)
160
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
4000
3200
2400
1600
800
CISS
COSS
CRSS
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS ≈ CDS + CGD
0
0 10 20 30 40 50
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
20
VDS > ID(ON) x rDS(ON)MAX
16 PULSE DURATION = 80µs TJ = -55oC
TJ = 25oC
12
TJ = 125oC
8
4
0
0 4 8 12 16 20
ID, DRAIN CURRENT (A)
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
2
TJ = 25oC
102
TJ = 150oC
10
TJ = 25oC
TJ = 150oC
1
0123
VSD, SOURCE TO DRAIN VOLTAGE (V)
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
4
20
ID = 18A
15
10
5
VDS = 80V
VDS = 200V
VDS = 320V
0
0 28 56 84 112 140
Qg(TOT), TOTAL GATE CHARGE (nC)
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet IRF350.PDF ] | |
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