|
|
PDF IRF3415 Data sheet ( Hoja de datos )
| Número de pieza | IRF3415 | |
| Descripción | Power MOSFET(Vdss=150V/ Rds(on)=0.042ohm/ Id=43A) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de IRF3415 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
|
No Preview Available !
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
G
PD - 91477D
IRF3415
HEXFET® Power MOSFET
D
VDSS = 150V
RDS(on) = 0.042Ω
ID = 43A
S
TO-220AB
Max.
43
30
150
200
1.3
± 20
590
22
20
5.0
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typ.
–––
0.50
–––
Max.
0.75
–––
62
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
5/13/98
1 page  
IRF3415
50
40
30
20
10
0
25 50 75 100 125 150 175
TC , Case Temperature ( °C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
VGS
RG
RD
D.U.T.
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.20
0.1 0.10
0.05
0.02
0.01
0.01
0.00001
PDM
t1
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
0.1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRF3415.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| IRF341 | N-Channel MOSFET Transistor |  Inchange Semiconductor |
| IRF341 | N-Channel Power MOSFETs/ 10A/ 350V/400V |  Fairchild Semiconductor |
| IRF341 | N-CHANNEL POWER MOSFETS |  Samsung semiconductor |
| IRF341 | Trans MOSFET N-CH 350V 10A 3-Pin(2+Tab) TO-3 |  New Jersey Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |