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Número de pieza | IRF244 | |
Descripción | 14A and 13A/ 275V and 250V/ 0.28 and 0.34 Ohm/ N-Channel Power MOSFETs | |
Fabricantes | Intersil Corporation | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IRF244 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! Semiconductor
January 1998
IRF244, IRF245,
IRF246, IRF247
14A and 13A, 275V and 250V, 0.28 and 0.34 Ohm,
N-Channel Power MOSFETs
Features
• 14A and 13A, 275V and 250V
• rDS(ON) = 0.28Ω and 0.34Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• 275V, 250V DC Rated - 120V AC Line System
Operation
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRF244
TO-204AA
IRF244
IRF245
TO-204AA
IRF245
IRF246
TO-204AA
IRF246
IRF247
TO-204AA
IRF247
NOTE: When ordering, include the entire part number.
Description
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching conver-
tors, motor drivers, relay drivers, and drivers for high power
bipolar switching transistors requiring high speed and low
gate drive power. These types can be operated directly from
integrated circuits.
Formerly developmental type TA17423.
Symbol
D
G
S
Packaging
DRAIN
(FLANGE)
JEDEC TO-204AA
GATE (PIN 1)
SOURCE (PIN 2)
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1997
5-1
File Number 2209.2
1 page IRF244, IRF245, IRF246, IRF247
Typical Performance Curves Unless Otherwise Specified (Continued)
25
80µs PULSE TEST
20
10V
6.0V
15
5.5V
10
VGS = 5.0V
5
4.5V
4.0V
0
0 2 46 8
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 6. SATURATION CHARACTERISTICS
10
100
VDS ≥ 50V
80µs PULSE TEST
10
TJ = 150oC
1
TJ = 25oC
0.1
0 2468
VGS, GATE TO SOURCE VOLTAGE (V)
FIGURE 7. TRANSFER CHARACTERISTICS
10
2.5
80µs PULSE TEST
2.0
1.5
VGS = 10V
3.0
ID = 14A
VGS = 10V
2.4
1.8
1.0 1.2
0.5
VGS = 20V
0.6
0
0 15 30 45 60
ID, DRAIN CURRENT (A)
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs
GATE VOLTAGE AND DRAIN CURRENT
0
75 -60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
1.25
ID = 250µA
1.15
1.05
0.95
0.85
0.75
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
3000
2400
1800
CISS
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS ≈ CDS + CGD
1200
600
COSS
CRSS
0 0 10 100
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
5-5
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet IRF244.PDF ] |
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