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PDF IRF235 Data sheet ( Hoja de datos )
| Número de pieza | IRF235 | |
| Descripción | 8.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ N-Channel Power MOSFETs | |
| Fabricantes | Intersil Corporation | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IRF235 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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Semiconductor
January 1998
IRF234, IRF235,
IRF236, IRF237
8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm,
N-Channel Power MOSFETs
Features
• 8.1A and 6.5A, 275V and 250V
• rDS(ON) = 0.45Ω and 0.68Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• 275V, 250V DC Rated - 120V AC Line System
Operation
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRF234
TO-204AA
IRF234
IRF235
TO-204AA
IRF235
IRF236
TO-204AA
IRF236
IRF237
TO-204AA
IRF237
NOTE: When ordering, include the entire part number.
Description
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching conver-
tors, motor drivers, relay drivers, and drivers for high power
bipolar switching transistors requiring high speed and low
gate drive power. These types can be operated directly from
integrated circuits.
Formerly developmental type TA17413.
Symbol
D
G
S
Packaging
DRAIN
(FLANGE)
JEDEC TO-204AA
GATE (PIN 1)
SOURCE (PIN 2)
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1997
5-1
File Number 2208.3
1 page  
IRF234, IRF235, IRF236, IRF237
Typical Performance Curves Unless Otherwise Specified (Continued)
15
80ms PULSE TEST
12
VGS = 10V
VGS = 8V
9
VGS = 7V
6
VGS = 6V
3
VGS = 4.0V VGS = 5V
0
0 2 46 8
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 6. SATURATION CHARACTERISTICS
10
100
VDS = 2 x VGS
80µs PULSE TEST
10
1
TJ = 150oC
TJ = 25oC
0.1
0 2468
VGS, GATE TO SOURCE VOLTAGE (V)
FIGURE 7. TRANSFER CHARACTERISTICS
10
4.0
80µs PULSE TEST
3.2
3.0
ID = 4.1A
VGS = 10V
2.4
2.4 1.8
1.6
VGS = 10V
0.8
VGS = 20V
0
0 8 16 24 32 40
ID, DRAIN CURRENT (A)
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs
GATE VOLTAGE AND DRAIN CURRENT
1.2
0.6
0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
1.25
ID = 250µA
1.15
1.05
0.95
0.85
0.75
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
1500
1200
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS ≈ CDS + CGD
900
CISS
600
COSS
300 CRSS
0 1 10 100
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
5-5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet IRF235.PDF ] | |
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