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PDF IRF230 Data sheet ( Hoja de datos )
| Número de pieza | IRF230 | |
| Descripción | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFET | |
| Fabricantes | Seme LAB | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IRF230 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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IRF230
TO–3 (TO–204AA) Package Outline.
Dimensions in mm (inches)
25.15 (0.99)
26.67 (1.05)
10.67 (0.42)
11.18 (0.44)
6.35 (0.25)
9.15 (0.36)
1.52 (0.06)
3.43 (0.135)
N–CHANNEL
ENHANCEMENT MODE
HIGH VOLTAGE
POWER MOSFET
12
Pin 1 – Gate
3
(case)
3.84 (0.151)
4.09 (0.161)
Pin 2 – Source
7.92 (0.312)
12.70 (0.50)
Case – Drain
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VDS Drain – Source Voltage1
VDGR
ID
ID
IDM
Drain - Gate Voltage (RGS = 20KW)1
Continuous Drain Current@ Tcase = 25°C
Continuous Drain Current@ Tcase = 100°C
Pulsed Drain Current 3
VGS Gate – Source Voltage
PD Maximum Power Dissipation @ Tcase = 25°C
Derate Linearly
ILM Inductive Current Clamped
EAS*
Single Pulse Avalanche energy Rating 4
TJ , TSTG Operating and Storage Junction Temperature Range
TL Lead Temperature : 0.063” from Case for 10 Sec.
200 V
200 V
9.0 A
6.0 A
36 A
±20 V
75 W
0.6 W/°C
36 A
150 mj
–55 to 150 °C
300 °C
THERMAL CHARACTERISTICS
Characteristic
RqJC
Junction to Case
RqCS
Case to Sink (Mounting Surface flat, smooth and greased.
RqJA
Junction to Ambient (Free air operation)
NOTES
1 TJ = +25°C to + 150°C
2 Pulse Test PUlse Width # 300ms. Duty Cycle # 2%
3 Repetitive Ration Pulse Width Limited by Maximum Junction Temperature.
4 VDD = 20V starting TJ = +25°C , L = 3.37mH, RGS = 50W, IPEAK = 9A
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Min.
Typ.
0.1
Max. Unit
1.67
°C/W
30
Prelim. 6/00
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet IRF230.PDF ] | |
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