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PDF IRF2204 Data sheet ( Hoja de datos )

Número de pieza IRF2204
Descripción AUTOMOTIVE MOSFET
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



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PD - 94434
AUTOMOTIVE MOSFET
IRF2204
Typical Applications
Electric Power Steering
14 Volts Automotive Electrical Systems
Features
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
G
HEXFET® Power MOSFET
D
VDSS = 40V
RDS(on) = 3.6m
ID = 210A†
S
Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET
utilizes the lastest processing techniques to achieve extremely low on-resistance
per silicon area. Additional features of this design are a 175°C junction operating
temperature, fast switching speed and improved repetitive avalanche rating.
These features combine to make this design an extremely efficient and reliable
device for use in Automotive applications and a wide variety of other applications.
TO-220AB
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy‡
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
www.irf.com
Max.
210†
150†
850
330
2.2
± 20
460
See Fig.12a, 12b, 15, 16
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
mJ
A
mJ
°C
Typ.
–––
0.50
–––
Max.
0.45
–––
62
Units
°C/W
1
08/07/02

1 page




IRF2204 pdf
IRF2204
250
LIMITED BY PACKAGE
200
150
100
50
0
25 50 75 100 125 150 175
TC, Case Temperature ( °C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
VGS
RG
RD
D.U.T.
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.1 0.20
0.10
0.05
0.02
0.01
0.01
0.001
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
0.01
t1, Rectangular Pulse Duration (sec)
P DM
t1
t2
Notes:
1. Duty factor D =
t1/ t 2
2. Peak T J = P DM x Z thJC + T C
0.1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
1
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