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Número de pieza | IRF1704 | |
Descripción | Power MOSFET(Vdss=40V/ Rds(on)=0.004ohm/ Id=170A) | |
Fabricantes | International Rectifier | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IRF1704 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! PD -94012B
AUTOMOTIVE MOSFET
IRF1704
Benefits
l 200°C Operaing Temperature
HEXFET® Power MOSFET
l Advanced Process Technology
l Ultra Low On-Resistance
D
VDSS = 40V
l Dynamic dv/dt Rating
l Fast Switching
l Repetitive Avalanche Allowed
G
RDS(on) = 0.004Ω
up to Tj Max
l Automotive Qualified (Q101)
ID = 170A
S
Description
Specifically designed for Automotive applications, this HEXFET® power
MOSFET has a 200°C max operating temperature with a Stripe Planar
design that utilizes the latest processing techniques to achieve extremely low
on-resistance per silicon area. Additional features of this HEXFET® power
MOSFET are fast switching speed and improved repetitive avalanche rating.
The continuing technology leadership of Internationl Rectifier provides 200°C
operating temperature in a plastic package. At high ambient temperatures, the
IRF1704 can carry up to 20% more current than similar 175 °C Tj max devices
in the same package outline. This makes this part ideal for existing and
emerging under-the-hood automotive applications such as Electric Power
Steering (EPS), Fuel / Water Pump Control and wide variety of other
applications.
TO-220AB
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
170
120
680
230
1.3
A
W
W/°C
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
± 20
670
100
23
1.9
V
mJ
A
mJ
V/ns
TJ
TSTG
TLEAD
Operating Junction and
Storage Temperature Range
Lead Temperature
Soldering Temperature, for 10 seconds
-55 to + 200
175
300 (1.6mm from case )
°C
°C
Mounting torque, 6-32 or M3 srew
10 lbf•in (1.1N•m)
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
–––
0.50
–––
Max.
0.75
–––
62
Units
°C/W
www.irf.com
1
02/13/02
1 page IRF1704
200
LIMITED BY PACKAGE
150
100
50
0
25 50 75 100 125 150 175 200
TC , Case Temperature ( °C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
VGS
RG
RD
D.U.T.
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
VDS
90%
10%
VGS
td(on) tr
td(off) tf
1
D = 0.50
0.20
0.1 0.10
0.05
0.02
0.01
0.01
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
PDM
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
0.1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet IRF1704.PDF ] |
Número de pieza | Descripción | Fabricantes |
IRF1704 | Power MOSFET(Vdss=40V/ Rds(on)=0.004ohm/ Id=170A) | International Rectifier |
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