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PDF IRF140 Data sheet ( Hoja de datos )
| Número de pieza | IRF140 | |
| Descripción | N-CHANNEL POWER MOSFET | |
| Fabricantes | Seme LAB | |
| Logotipo |  |
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IRF140
MECHANICAL DATA
Dimensions in mm (inches)
39.95 (1.573)
max.
30.40 (1.197)
30.15 (1.187)
17.15 (0.675)
16.64 (0.655)
4.09 (0.161)
3.84 (0.151)
dia.
2 plcs.
2
1
20.32 (0.800)
18.80 (0.740)
dia.
N–CHANNEL
POWER MOSFET
VDSS
ID(cont)
RDS(on)
100V
28A
0.077Ω
FEATURES
• HERMETICALLY SEALED TO–3 METAL
PACKAGE
• SIMPLE DRIVE REQUIREMENTS
• SCREENING OPTIONS AVAILABLE
1.09 (0.043)
0.97 (0.038)
dia.
2 plcs.
TO–3 Metal Package
Pin 1 – Gate
Pin 2 – Source
Case – Drain
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VGS Gate – Source Voltage
ID
Continuous Drain Current
(VGS = 0 , Tcase = 25°C)
ID
Continuous Drain Current
(VGS = 0 , Tcase = 100°C)
IDM Pulsed Drain Current 1
PD Power Dissipation @ Tcase = 25°C
Linear Derating Factor
±20V
28A
20A
112A
125W
1W/°C
EAS
IAR
EAR
dv/dt
Single Pulse Avalanche Energy 2
Avalanche Current 2
Repetitive Avalanche Energy 2
Peak Diode Recovery 3
250mJ
28A
12.5mJ
5.5V/ns
TJ , Tstg
TL
Operating and Storage Temperature Range
Lead Temperature 1.6mm (0.63”) from case for 10 sec.
-55 to +150°C
300°C
Notes
1) Pulse Test: Pulse Width ≤ 300µs, δ ≤ 2%
2) @ VDD = 25V , L ≥ 480µH , RG = 25Ω , Peak IL = 28A , Starting TJ = 25°C
3) @ ISD ≤ 28A , di/dt ≤ 170A/µs , VDD ≤ BVDSS , TJ ≤ 150°C , Suggested RG = 9.1Ω
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 9/96
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet IRF140.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| IRF140 | N-CHANNEL POWER MOSFETS |  Samsung semiconductor |
| IRF140 | N-CHANNEL POWER MOSFET | Seme LAB |
| IRF140 | 28A/ 100V/ 0.077 Ohm/ N-Channel Power MOSFET |  Intersil Corporation |
| IRF140 | TRANSISTORS N-CHANNEL(Vdss=100V/ Rds(on)=0.077ohm/ Id=28A) |  International Rectifier |
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