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Número de pieza | IRF1310S | |
Descripción | Power MOSFET(Vdss=100V/ Rds(on)=0.04ohm/ Id=41A) | |
Fabricantes | International Rectifier | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IRF1310S (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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HEXFET® Power MOSFET
PD - 9.1221
IRF1310S
Advanced Process Technology
Ultra Low On-Resistance
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Repetitive Avalanche Rated
175°C Operating Temperature
VDSS = 100V
RDS(on) = 0.04Ω
ID = 41A
Description
Fourth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve the lowest possible on-resistance per silicon
area. This benefit, combined with the fast switching speed and ruggedized device
design that HEXFET Power MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide variety of applications.
The SMD-220 is a surface mount power package capable of accommodating die
sizes up to HEX-4. It provides the highest power capability and the lowest possible
on-resistance in any existing surface mount package. The SMD-220 is suitable for
high current applications because of its low internal connection resistance and can
dissipate up to 2.0W in a typical surface mount application.
SMD-220
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ, TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation (PCB Mount)**
Linear Derating Factor
Linear Derating Factor (PCB Mount)**
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
41
29
160
170
3.8
1.1
0.025
±20
230
41
17
5.5
-55 to + 175
300 (1.6mm from case)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
Min.
Typ.
RθJC
RθJA
RθJA
Junction-to-Case
Junction-to-Ambient (PCB Mount)**
Junction-to-Ambient
––––
––––
––––
––––
––––
––––
** When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
Max.
0.90
40
62
Units
°C/W
To Order
Revision 0
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50
40
30
20
10
0
25 50 75 100 125 150 175
TC , Case Temperature (°C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
IRF1310S
VDS
VGS
RG
RD
D.U.T.
10 V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
VDD
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
1
D = 0.50
0 .2 0
0.1 0 .10
0 .0 5
0 .0 2
0.01
0.01
0.00001
PD M
SING LE PULSE
(THERMAL RESPONSE)
t1
t2
N o tes:
1. D uty fa ctor D = t 1 / t 2
2. P e ak TJ = P D M x Z th JC + T C
0.0001
0 .001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
10
To Order
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet IRF1310S.PDF ] |
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