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PDF IRF1310NL Data sheet ( Hoja de datos )
| Número de pieza | IRF1310NL | |
| Descripción | Power MOSFET(Vdss=100V/ Rds(on)=0.036ohm/ Id=42A) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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l Advanced Process Technology
l Surface Mount (IRF1310NS)
l Low-profile through-hole (IRF1310NL)
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
G
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRF1310NL) is available for low-
profile applications.
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
PD - 91514B
IRF1310NS/L
HEXFET® Power MOSFET
D
VDSS =100V
RDS(on) = 0.036Ω
S ID = 42A
D 2 Pak
T O -26 2
Max.
42
30
140
3.8
160
1.1
± 20
420
22
16
5.0
-55 to + 175
300 (1.6mm from case )
Typ.
–––
–––
Max.
0.95
40
Units
A
W
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
5/13/98
1 page  
IRF1310NS/L
50
40
30
20
10
0
25 50 75 100 125 150 175
TC , Case Temperature ( °C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
10
VDS
VGS
RG
RD
D.U.T.
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-V D D
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.20
0.10
0.1
0.05
0.02
0.01
0.01
0.00001
PDM
t1
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
0.1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IRF1310NL.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| IRF1310N | Power MOSFET(Vdss=100V/ Rds(on)=0.036ohm/ Id=42A) | International Rectifier |
| IRF1310NL | Power MOSFET(Vdss=100V/ Rds(on)=0.036ohm/ Id=42A) | International Rectifier |
| IRF1310NLPBF | Power MOSFET ( Transistor ) | International Rectifier |
| IRF1310NS | Power MOSFET(Vdss=100V/ Rds(on)=0.036ohm/ Id=42A) | International Rectifier |
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