DataSheet.es    


PDF IRF120 Data sheet ( Hoja de datos )

Número de pieza IRF120
Descripción 8.0A and 9.2A/ 80V and 100V/ 0.27 and 0.36 Ohm/ N-Channel/ Power MOSFETs
Fabricantes Intersil Corporation 
Logotipo Intersil Corporation Logotipo



Hay una vista previa y un enlace de descarga de IRF120 (archivo pdf) en la parte inferior de esta página.


Total 7 Páginas

No Preview Available ! IRF120 Hoja de datos, Descripción, Manual

Semiconductor
October 1997
IRF120, IRF121,
IRF122, IRF123
8.0A and 9.2A, 80V and 100V, 0.27 and 0.36 Ohm,
N-Channel, Power MOSFETs
Features
• 8.0A and 9.2A, 80V and 100V
• rDS(ON) = 0.27and 0.36
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRF120
TO-204AA
IRF120
IRF121
TO-204AA
IRF121
IRF122
TO-204AA
IRF122
IRF123
TO-204AA
IRF123
NOTE: When ordering, use the entire part number.
Description
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching conver-
tors, motor drivers, relay drivers, and drivers for high power
bipolar switching transistors requiring high speed and low
gate drive power. These types can be operated directly from
integrated circuits.
Formerly developmental type TA09594.
Symbol
D
G
S
Packaging
JEDEC TO-204AA
DRAIN
(FLANGE)
GATE (PIN 1)
SOURCE (PIN 2)
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1997
2-1
File Number 1565.2

1 page




IRF120 pdf
IRF120, IRF121, IRF122, IRF123
Typical Performance Curves Unless Otherwise Specified (Continued)
15
80µs PULSE TEST
12
9
6
VGS = 10V
VGS = 8V
VGS = 7V
VGS = 6V
VGS = 5V
3
VGS = 4V
0
0 1.0 2.0 3.0 4.0 5.0
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 6. SATURATION CHARACTERISTICS
100
VDS 50V
80µs PULSE TEST
10
1 TJ = 175oC
TJ = 25oC
0.1
0
24 6 8
VGS, GATE TO SOURCE VOLTAGE (V)
FIGURE 7. TRANSFER CHARACTERISTICS
10
2.5
80µs PULSE TEST
2.0
1.5
1.0
VGS = 10V
3.0
ID = 9.2A
VGS = 10V
2.4
1.8
1.2
0.5
0
0
VGS = 20V
8 16 24
ID, DRAIN CURRENT (A)
32
40
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
0.6
0.0
-60
0 60 120
TJ, JUNCTION TEMPERATURE (oC)
180
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
1.25
ID = 250µA
1.15
1.05
0.95
0.85
0.75
-60
0 60 120
TJ, JUNCTION TEMPERATURE (oC)
180
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
1000
800
600
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS CDS + CGS
400 CISS
200
0
1
COSS
CRSS
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
100
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
2-5

5 Page










PáginasTotal 7 Páginas
PDF Descargar[ Datasheet IRF120.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
IRF120N-CHANNEL POWER MOSFETSSamsung semiconductor
Samsung semiconductor
IRF1208.0A and 9.2A/ 80V and 100V/ 0.27 and 0.36 Ohm/ N-Channel/ Power MOSFETsIntersil Corporation
Intersil Corporation
IRF120N-Channel Power MOSFETs/ 11 A/ 60-100 VFairchild Semiconductor
Fairchild Semiconductor
IRF120N-Channel MOSFET TransistorInchange Semiconductor
Inchange Semiconductor

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar