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PDF IRCZ44 Data sheet ( Hoja de datos )
| Número de pieza | IRCZ44 | |
| Descripción | Power MOSFET(Vdss=60V/ Rds(on)=0.028ohm/ Id=50A) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IRCZ44 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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PD - 9.529B
IRCZ44
HEXFET® Power MOSFET
l Dynamic dv/dt Rating
l Current Sense
l 175°C Operating Temperature
l Fast Switching
l Ease of Paralleling
l Simple Drive Requirements
Description
Third Generation HEXFETs from International Rectifier provide the designer with
the best combination of fast switching, ruggedized device, low on-resistance and
cost-effectiveness.
The HEXSense device provides an accurate fraction of the drain current through
the additional two leads to be used for control or protection of the device. These
devices exhibit similar electrical and thermal characteristics as their IRF-series
equivalent part numbers. The provision of a kelvin source connection effectively
eliminates problems of common source inductance when the HEXSence is
used as a fast, high-current switch in non current-sensing applications.
VDSS = 60V
RDS(on) = 0.028Ω
ID = 50*A
TO-220 HexSense
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Max.
50*
37
210
150
1.0
±20
30
4.5
-55 to + 175
300 (1.6mm from case)
10 lbf•in (1.1 N•m)
Units
A
W
W/°C
V
mJ
V/ns
°C
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient —
Min.
—
—
—
Typ.
—
0.50
—
Max.
1.0
—
62
Units
°C/W
C-13
1 page  
IRCZ44
TC, Case Temperature (°C)
Fig. 9 Maximum Drain Current vs.
Case Temperature
Starting TJ, Junction Temperature (°C)
Fig. 12c Maximum Avalanche Energy
vs. Drain Current
t1, Rectiangular Pulse Duration (seconds)
Fig. 11 Maximum Effective Transient Thermal Impedance, Junction-to-Case
C-17
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet IRCZ44.PDF ] | |
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