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PDF IRCZ34 Data sheet ( Hoja de datos )

Número de pieza IRCZ34
Descripción Power MOSFET(Vdss=60V/ Rds(on)=0.050ohm/ Id=30A)
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



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No Preview Available ! IRCZ34 Hoja de datos, Descripción, Manual

PD - 9.590A
IRCZ34
HEXFET® Power MOSFET
l Dynamic dv/dt Rating
l Current Sense
l 175°C Operating Temperature
l Fast Switching
l Ease of Paralleling
l Simple Drive Requirements
Description
Third Generation HEXFETs from International Rectifier provide the designer with
the best combination of fast switching, ruggedized device, low on-resistance and
cost-effectiveness.
The HEXSence device provides an accurate fraction of the drain current through
the additional two leads to be used for control or protection of the device. These
devices exhibit similar electrical and thermal characteristics as their IRF-series
equivalent part numbers. The provision of a kelvin source connection effectively
eliminates problems of common source inductance when the HEXSence is
used as a fast, high-current switch in non current-sensing applications.
VDSS = 60V
RDS(on) = 0.050
ID = 30A
TO-220 HexSense
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ‚
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or screw
Max.
30
21
120
88
0.59
±20
15
4.5
-55 to + 175
300 (1.6mm from case)
10 lbf•in (1.1 N•m)
Units
A
W
W/°C
V
mJ
A
°C
Thermal Resistance
Parameter
Min. Max. Units
RθJC
RθCS
RθJA
Junction-to-Case
— — 1.7
Case-to-Sink, Flat, Greased Surface
0.50
°C/W
Junction-to-Ambient
——
62
** When mounted on FR-4 board using minimum recommended footprint. For recommended footprint and soldering techniques refer toapplication note #AN-994.
C-7

1 page




IRCZ34 pdf
IRCZ34
TC, Case Temperature (°C)
Fig. 9 Maximum Drain Current vs. Case
Temperature
Starting TJ, Junction Temperature (°C)
Fig. 12c Maximum Avalanche Energy
vs. Drain Current
t1, Rectiangular Pulse Duration (seconds)
Fig. 11 Maximum Effective Transient Thermal Impedance, Junction-to-Case
C-11

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