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PDF IR51HD737 Data sheet ( Hoja de datos )

Número de pieza IR51HD737
Descripción SELF-OSCILLATING HALF-BRIDGE
Fabricantes International Rectifier 
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Data Sheet No. PD-6.057D
IR51HD737
SELF-OSCILLATING HALF-BRIDGE
Features
n Output Power MOSFETs in half-bridge configuration
300V Rated Breakdown Voltage
n High side gate drive designed for bootstrap operation
n Bootstrap diode integrated into package
n Accurate timing control for both Power MOSFETs
Matched delay to get 50% duty cycle
Matched deadtime of 1.2us
n Internal oscillator with programmable frequency
f= 1
1. 4 × (RT + 75) × CT
n Zener clamped Vcc for offline operation
n Half-bridge output is out of phase with RT
Product Summary
VIN (max)
Duty Cycle
Deadtime
RDS(on)
PD (TA = 25 ºC)
Package
Description
The IR51HD737 is a high voltage, high speed, self-
oscillating half-bridge. Proprietary HVIC and latch
immune CMOS technologies, along with the
HEXFET® power MOSFET technology, enable
ruggedized single package construction. The front-end
features a programmable oscillator which functions
similar to the CMOS 555 timer. The supply to the
control circuit has a zener clamp to simplify offline
operation. The output features two HEXFETs in a
half-bridge configuration with an internally set
deadtime designed for minimum cross-conduction in
the half-bridge. Propagation delays for the high and
low side power MOSFETs are matched to simplify use
in 50% duty cycle applications. The device can
operate up to 300 volts.
IR51HD737
9506
300V
50%
1.2µs
0.75
2.0W
Typical Connection
U P TO 300V D C BU S
V IN
IR 5 1 H D 7 3 7
1
V
CC
V
B
6
COM
RT
CT
2
R
T
V IN
9
3
C
T
7
VO
4
COM
TO LO AD
To Order

1 page




IR51HD737 pdf
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Lead Assignments
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IR51HD737
1234
67
VCC RT CT COM
VB V0
9 Lead SIP w/o Leads 5 & 8
IR51HD737
9
VIN
VCCUV+
VCC
VCLAMP
RT
CT
V+
VO 0
Figure 1. Input/Output Timing Diagram
RT
50%
50%
HIGH
SIDE
LOW
SIDE
90%
10%
90%
DT
10%
Figure 2. Deadtime Waveform Definitions
To Order

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