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PDF IR2121 Data sheet ( Hoja de datos )
| Número de pieza | IR2121 | |
| Descripción | CURRENT LIMITING LOW SIDE DRIVER | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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Data Sheet No. PD-6.018D
IR2121
CURRENT LIMITING LOW SIDE DRIVER
Features
Product Summary
n Gate drive supply range from 12 to 18V
n Undervoltage lockout
n Current detection and limiting loop to limit driven
power transistor current
n Error lead indicates fault conditions and programs
shutdown time
n Output in phase with input
VOFFSET
IO+/-
VOUT
VCSth
5V max.
1A / 2A
12 - 18V
230 mV
Description
The IR2121 is a high speed power MOSFET and
IGBT driver with over-current limiting protection cir-
cuitry. Latch immune CMOS technology enables rug-
gedized monolithic construction. Logic inputs are
compatible with standard CMOS or LSTTL outputs.
The output driver features a high pulse current buffer
stage designed for minimum cross-conduction. The
protection circuitry detects over-current in the driven
power transistor and limits the gate drive voltage.
Cycle-by-cycle shutdown is programmed by an ex-
ternal capacitor which directly controls the time in-
terval between detection of the over-current limiting
condition and latched shutdown. The output can be
used to drive an N-channel power MOSFET or IGBT
in the low side configuration.
ton/off (typ.)
Package
150 & 150 ns
Typical Connection
VCC
VCC
VCC
IN IN OUT
ERR
CS
COM
VS
TO
LOAD
To Order
CONTROL INTEGRATED CIRCUIT DESIGNERS MANUAL B-91
1 page  
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Device Information
Process & Design Rule
Transistor Count
Die Size
Die Outline
Index
Next Data Sheet
IR2121
HVDCMOS 4.0 µm
410
104 X 111 X 26 (mil)
Thickness of Gate Oxide
Connections
Material
First Width
Layer
Spacing
Thickness
Material
Second
Width
Layer
Spacing
Thickness
Contact Hole Dimension
Insulation Layer
Material
Thickness
Passivation
Material
(1) Thickness
Passivation
Material
(2) Thickness
Method of Saw
Method of Die Bond
Wire Bond
Method
Material
Leadframe
Material
Die Area
Lead Plating
Package
Types
Materials
Remarks: * Patent Pending
800Å
Poly Silicon
4 µm
6 µm
5000Å
Al - Si (Si: 1.0% ±0.1%)
6 µm
9 µm
20,000Å
8 µm X 8 µm
PSG (SiO2)
1.5 µm
PSG (SiO2)
1.5 µm
Proprietary*
Proprietary*
Full Cut
Ablebond 84 - 1
Thermo Sonic
Au (1.0 mil / 1.3 mil)
Cu
Ag
Pb : Sn (37 : 63)
8 Lead PDIP
EME6300 / MP150 / MP190
To Order
CONTROL INTEGRATED CIRCUIT DESIGNERS MANUAL B-95
5 Page 
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Index
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IR2121
1.0 0
0.8 0
0.6 0
0.4 0
0.2 0
Max.
0.0 0
-50
-25
0 25 50 75
Temperature (°C)
100 125
Figure 19A. Low Level Output vs. Temperature
1.0 0
0.8 0
0.6 0
0.4 0
0.2 0
Max.
0.0 0
10 12 14 16 18
VBS Floating Supply Voltage (V)
Figure 19B. Low Level Output vs. Voltage
20
5.0 0
4.0 0
3.0 0
2.00 Max.
1.00 Typ.
0.0 0
-50 -25 0 25 50 75 100 125
Temperature (°C)
Figure 20A. VCC Supply Current vs. Temperature
5.0 0
4.0 0
3.0 0
2.00 Max.
1.00 Typ.
0.0 0
10 12 14 16 18
VCC Supply Voltage (V)
Figure 20B. VCC Supply Current vs. Voltage
20
25 25
20 20
15 15
10
Max.
5
Typ.
0
-50 -25 0 25 50 75 100 125
Temperature (°C)
Figure 21A. Logic “1” Input Current vs. Temperature
Max.
10
5 Typ.
0
10 12 14 16 18 20
VCC Logic Supply Voltage (V)
Figure 21B. Logic “1” Input Current vs. Voltage
To Order
CONTROL INTEGRATED CIRCUIT DESIGNERS MANUAL B-101
11 Page | ||
| Páginas | Total 15 Páginas | |
| PDF Descargar | [ Datasheet IR2121.PDF ] | |
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