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PDF IR2110L Data sheet ( Hoja de datos )

Número de pieza IR2110L
Descripción HIGH AND LOW SIDE DRIVER
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



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Data Sheet No. PD-6.085
IR2110L4
HIGH AND LOW SIDE DRIVER
Features
Product Summary
n Floating channel designed for bootstrap
operation
Fully operational to +400V
Tolerant to negative transient voltage
VOFFSET
IO+/-
VOUT
400V max.
2A / 2A
10 - 20V
dV/dt immune
n Gate drive supply range from 10 to 20V
n Undervoltage lockout for both channels
ton/off (typ.)
Delay Matching
120 & 94 ns
10 ns
n Separate logic supply range from 5 to 20V
Logic and power ground ±5V offset
Description
n CMOS Schmitt-triggered inputs with pull-down
n Cycle by cycle edge-triggered shutdown logic
n Matched propagation delay for both channels
n Outputs in phase with inputs
The IR2110L4 is a high voltage, high speed power MOSFET
and IGBT driver with independent high and low side ref-
erenced output channels. Proprietary HVIC and latch im-
mune CMOS technologies enable ruggedized monolithic
construction. Logic inputs are compatible with standard
CMOS or LSTTL outputs. The output drivers feature a
high pulse current buffer stage designed for minimum
driver cross-conduction. Propagation delays are matched
to simplify use in high frequency applications. The floating
channel can be used to drive an N-channel power MOSFET
or IGBT in the high side configuration which operates up
Absolute Maximum Ratings
to 400 volts.
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage
parameters are absolute voltages referenced to COM. The Thermal Resistance and Power Dissipation ratings
are measured under board mounted and still air conditions.
Symbol
VB
VS
VHO
VCC
VLO
VDD
VSS
VIN
dVs/dt
PD
RthJA
TJ
TS
TL
Parameter
High Side Floating Supply Voltage
High Side Floating Supply Offset Voltage
High Side Floating Output Voltage
Low Side Fixed Supply Voltage
Low Side Output Voltage
Logic Supply Voltage
Logic Supply Offset Voltage
Logic Input Voltage (HIN, LIN & SD)
Allowable Offset Supply Voltage Transient (Figure 2)
Package Power Dissipation @ TA £ +25°C
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature
Lead Temperature (Soldering, 10 seconds)
Weight
Min. Max.
-0.5 VS + 20
— 400
VS - 0.5
-0.5
VB + 0.5
20
-0.5
-0.5
VCC - 20
VSS - 0.5
VCC + 0.5
VSS + 20
VCC + 0.5
VDD + 0.5
50
— 1.6
— 75
-55 125
-55 150
— 300
1.5 (typical)
Units
V
V/ns
W
°C/W
°C
g
2/14/97

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IR2110L pdf
250
200
150
Max.
100 Typ.
50
0
-50
-25
0 25 50 75
Temperature (°C)
100
Figure 7A. Turn-On Time vs. Temperature
125
IR2110L4
250
200
Max.
150 Typ.
100
50
0
10
12 14 16 18
VBIAS Supply Voltage (V)
Figure 7B. Turn-On Time vs. Voltage
20
250
200
150
Max.
100
Typ.
50
0
-50
-25
0 25 50 75
Temperature (°C)
100
Figure 8A. Turn-Off Time vs. Temperature
125
250
200
Max.
150
Typ.
100
50
0
10
12 14 16 18
VBIAS Supply Voltage (V)
Figure 8B. Turn-Off Time vs. Voltage
20
250
200
150
100
Max.
Typ.
50
0
-50
-25
0 25 50 75
Temperature (°C)
100
Figure 9A. Shutdown Time vs. Temperature
125
250
200
Max.
150
Typ.
100
50
0
10
12 14 16 18
VBIAS Supply Voltage (V)
Figure 9B. Shutdown Time vs. Voltage
20

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IR2110L arduino
5.0 0
4.0 0
3.00 Typ.
Min.
2.0 0
1.0 0
0.0 0
-50
-25
0 25 50 75
Temperature (°C)
100 125
Figure 27A. Output Sink Current vs. Temperature
IR2110L4
5.0 0
4.0 0
3.0 0
2.0 0
Typ.
1.00 Min.
0.0 0
10
12 14 16 18
VBIAS Supply Voltage (V)
Figure 27B. Output Sink Current vs. Voltage
20
320V
150
125
140V
100
75
10V
50
25
0
1E+2
1E+3
1E+4
Frequency (Hz)
1E+5
1E+6
Figure 28. IR2110L6 TJ vs. Frequency (IRFBC20)
RGATE = 33W, VCC = 15V
150
320V 140V
125
100
10V
75
50
25
0
1E+2
1E+3
1E+4
1E+5
1E+6
Frequency (Hz)
Figure 30. IR2110L6 TJ vs. Frequency (IRFBC40)
RGATE = 15W, VCC = 15V
320V
150
125
140V
100
75
10V
50
25
0
1E+2
1E+3
1E+4
1E+5
1E+6
Frequency (Hz)
Figure 29. IR2110L6 TJ vs. Frequency (IRFBC30)
RGATE = 22W, VCC = 15V
150
320V 140V
125
10V
100
75
50
25
0
1E+2
1E+3
1E+4
1E+5
1E+6
Frequency (Hz)
Figure 31. IR2110L6 TJ vs. Frequency (IRFPE50)
RGATE = 10W, VCC = 15V

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