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PDF IR20153SPbF Data sheet ( Hoja de datos )
| Número de pieza | IR20153SPbF | |
| Descripción | HIGH SIDE DRIVER WITH RECHARGE | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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Preliminary Data Sheet PD60214 Rev B
IR20153S & (PbF)
HIGH SIDE DRIVER WITH RECHARGE
Features
Product Summary
• Floating channel designed for bootstrap operation
Fully operational up to 150V
VOFFSET
150V max.
Tolerant to negative transient voltage, dV/dt immune
• Gate drive supply range from 5V to 20V
• Undervoltage lockout
• Internal recharge FET for bootstrap refresh
• Internal deadtime of 11µs and 0.8µs
• CMOS Schmitt-triggered input logic
• Output out of phase with input
• Reset input
• Split pull-up and pull-down gate drive pins
• Also available LEAD-FREE (PbF)
IO+/-
VOUT
ton/off
400mA @ VBS=7V,
1.5A @ VBS=16V
5-20V
1.0 and 0.3 µs
Description
Package
The IR20153S is a high voltage, high speed power MOSFET driver . Proprietary HVIC
and latch immune CMOS technologies enable ruggedized monolithic construction. The
logic input is compatible with standard CMOS output down to 3.3V. The output driver
features a high pulse current buffer stage designed for minimum cross-conduction. The
floating channel can be used to drive an N-channel power MOSFET in the high or low
side configuration which operates up to 150 volts.
8-Lead SOIC
Typical Connection
up to 150V
VCC
IN
RESET
(Refer to Lead Assignments
for correct configuration).
This/These diagram(s) show
electrical connections only.
Please refer to our Applica-
tion Notes and DesignTips
for proper circuit board lay-
out.
www.irf.com
VCC
IN
GND
RESET
VB
HOH
HOL
VS
Load
1
1 page  
IR20153S & (PbF)
A True table for Vcc, VBS, RESET, IN, HO and RechFET is shown as follows. This truth table is for ACTIVE
LOW IN.
Vcc
<VccUVLO-
VBS
<VBSUVLO-
RESET-
HIGH
IN-
HIGH
HO
OFF
RechFET
ON
<VccUVLO-
<VBSUVLO-
HIGH
LOW
OFF
ON
<VccUVLO-
<VBSUVLO-
LOW
HIGH
OFF
ON
<VccUVLO-
<VBSUVLO-
LOW
LOW
OFF
ON
<VccUVLO-
>VBSUVLO+
HIGH
HIGH
OFF
ON
<VccUVLO-
>VBSUVLO+
HIGH
LOW
OFF
ON
<VccUVLO-
>VBSUVLO+
LOW
HIGH
OFF
ON
<VccUVLO-
>VBSUVLO+
LOW
LOW
OFF
ON
>VccUVLO+
<VBSUVLO-
HIGH
HIGH
OFF
ON
>VccUVLO+
<VBSUVLO-
HIGH
LOW
OFF
OFF
>VccUVLO+
<VBSUVLO-
LOW
HIGH
OFF
ON
>VccUVLO+
<VBSUVLO-
LOW
LOW
OFF
ON
>VccUVLO+
>VBSUVLO+
HIGH
HIGH
OFF
ON1
>VccUVLO+
>VBSUVLO+
HIGH
LOW
ON
OFF1
>VccUVLO+
>VBSUVLO+
LOW
HIGH
OFF
ON1
>VccUVLO+
>VBSUVLO+
LOW
LOW
OFF
ON1
RESET = HIGH indicates that high side MOSFET is allowed to be turned on.
RESET = LOW indicates that high side MOSFET is OFF.
IN = LOW indicates that high side MOSFET is on.
IN = HIGH indicates that high side MOSFET is off.
RechFET = ON indicates that the recharge MOSFET is on.
RechFET = OFF indicates that the recharge MOSFET is off.
1 Note: Refer to the RESET functionality graph of Figure 7, for VCC and VBS voltage ranges under which
the functionality is normal.
www.irf.com
5
5 Page 
IR20153S & (PbF)
35
30
25
20
15
10
5
0
3.4
125oC
25oC
-40oC
3.8 4.2 4.6
VCC (V)
5
Figure 8. Reset Functionality
This graph explains the functionality limitation as a
function of VCC, VBS and temperature. Each curve on
the graph represents VCC Vs. VBS, for a particular
temperature. For each particular temperature and VCC,
the output is non-functional for any value of VBS above
the drawn curve. But for any value of VBS below the
curve the functionality is fine.
700
650
600
550
500
450
400
-50
0 50 100
Temperature (oC)
150
Figure 10. Output Source Current
vs. Tem perature, VBS=7V
www.irf.com
2200
1800
1400
1000
600
200
5
-40C
125C
10 15
VBS (V)
Figure 9. Output Sink Current
vs. VBS
20
1300
1200
1100
1000
900
800
-50
0 50 100
Temperature (oC)
150
Figure 11. Turn-on Propagation Delay
vs. Tem perature, VBS=7V
11
11 Page | ||
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| PDF Descargar | [ Datasheet IR20153SPbF.PDF ] | |
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