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PDF IPS09N03LA Data sheet ( Hoja de datos )
| Número de pieza | IPS09N03LA | |
| Descripción | OptiMOS 2 Power-Transistor | |
| Fabricantes | Infineon Technologies AG | |
| Logotipo |  |
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OptiMOS®2 Power-Transistor
Features
• Ideal for high-frequency dc/dc converters
• Qualified according to JEDEC1) for target application
• N-channel, logic level
• Excellent gate charge x R DS(on) product (FOM)
• Superior thermal resistance
• 175 °C operating temperature
IPD09N03LA IPF09N03LA
IPS09N03LA IPU09N03LA
Product Summary
V DS
R DS(on),max (SMD version)
ID
25 V
8.6 mΩ
50 A
Type
IPD09N03LA
IPF09N03LA
IPS09N03LA
IPU09N03LA
Package
Ordering Code
Marking
P-TO252-3-11
Q67042-S4154
09N03LA
P-TO252-3-23
Q67042-S4199
09N03LA
P-TO251-3-11
Q67042-S4246
09N03LA
P-TO251-3-21
Q67042-S4155
09N03LA
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C2)
T C=100 °C
Pulsed drain current
I D,pulse T C=25 °C3)
Avalanche energy, single pulse
E AS I D=45 A, R GS=25 Ω
Reverse diode dv /dt
dv /dt
I D=50 A, V DS=20 V,
di /dt =200 A/µs,
T j,max=175 °C
Gate source voltage4)
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
50
45
350
75
6
±20
63
-55 ... 175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
Rev. 1.7
page 1
2004-05-19
1 page  
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
60
10 V 4.5 V
50
40
30
20
10
0
012
V DS [V]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
100
IPD09N03LA IPF09N03LA
IPS09N03LA IPU09N03LA
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
4.1 V
28
3.2 V
24
3.5 V
3.8 V
4.1 V
3.8 V
20
16
3.5 V
12
3.2 V
3V
2.8 V
3
8
4
0
0
20 40
I D [A]
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
4.5 V
10 V
60
60
80 50
40
60
30
40
20
20
175 °C
25 °C
10
0
012345
V GS [V]
0
0 10 20 30 40 50 60
I D [A]
Rev. 1.7
page 5
2004-05-19
5 Page 
IPD09N03LA IPF09N03LA
IPS09N03LA IPU09N03LA
Published by
Infineon Technologies AG
Bereich Kommunikation
St.-Martin-Straße 53
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as
warranted characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices, please contact your
nearest Infineon Technologies office in Germany or our Infineon Technologies representatives worldwide
(see address list).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact your nearest Infineon Technologies office.
Infineon Technologies' components may only be used in life-support devices or systems with the
expressed written approval of Infineon Technologies if a failure of such components can reasonably
be expected to cause the failure of that life-support device or system, or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.7
page 11
2004-05-19
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet IPS09N03LA.PDF ] | |
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