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Número de pieza | IPS05N03LA | |
Descripción | OptiMOS 2 Power-Transistor | |
Fabricantes | Infineon Technologies AG | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IPS05N03LA (archivo pdf) en la parte inferior de esta página. Total 11 Páginas | ||
No Preview Available ! OptiMOS®2 Power-Transistor
Features
• Ideal for high-frequency dc/dc converters
• Qualified according to JEDEC1) for target application
• N-channel, logic level
• Excellent gate charge x R DS(on) product (FOM)
• Superior thermal resistance
• 175 °C operating temperature
IPD05N03LA IPF05N03LA
IPS05N03LA IPU05N03LA
Product Summary
V DS
R DS(on),max (SMD version)
ID
25 V
5.1 mΩ
50 A
Type
IPD05N03LA
IPF05N03LA
IPS05N03LA
IPU05N03LA
Type
IPD05N03LA
IPPaFc0k5aNg0e3LA
IOPrSd0e5riNn0g3CLAode
IMPaUr0k5inNg03LA
Package
Ordering Code
P-TO252-3-11 Q67042-S4144
P-TOP2-5T2O-32-5121-3-23 P-QT6O7205422--3S-23
Q670P4-2T-OS245114-43-11 QQ676074024-2S-4S194
05N0P3-LTAO251-3-21 05QN60730L4A2-S4230
Marking
05N03LA
05PN-T0O3L2A51-3-11
05QN60730L4A2-S4244
050N5N030L3ALA
P-TO251-3-21
Q67042-S4230
05N03LA
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C2)
T C=100 °C
Pulsed drain current
I D,pulse T C=25 °C3)
Avalanche energy, single pulse
E AS I D=45 A, R GS=25 Ω
Reverse diode dv /dt
dv /dt
I D=50 A, V DS=20 V,
di /dt =200 A/µs,
T j,max=175 °C
Gate source voltage4)
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
50
50
350
300
6
±20
94
-55 ... 175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
Rev. 1.7
page 1
2004-05-19
1 page 5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
100
10 V
90
4.5 V
4.1 V
IPD05N03LA IPF05N03LA
IPS05N03LA IPU05N03LA
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
20
18 3 V 3.2 V
3.5 V
3.8 V
4.1 V
80 16
70
3.8 V
14
60 12
50
40
30
20
10
0
0
3.5 V
12
V DS [V]
3.2 V
3V
2.8 V
3
10
8
6
4
2
0
0
4.5 V
10 V
20 40 60 80 100
I D [A]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
100
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
80
70
80
60
60 50
40
40
30
20
175 °C
25 °C
20
10
0
012345
V GS [V]
0
0 10 20 30 40 50 60
I D [A]
Rev. 1.7
page 5
2004-05-19
5 Page IPD05N03LA IPF05N03LA
IPS05N03LA IPU05N03LA
Published by
Infineon Technologies AG
Bereich Kommunikation
St.-Martin-Straße 53
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as
warranted characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices, please contact your
nearest Infineon Technologies office in Germany or our Infineon Technologies representatives worldwide
(see address list).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact your nearest Infineon Technologies office.
Infineon Technologies' components may only be used in life-support devices or systems with the
expressed written approval of Infineon Technologies if a failure of such components can reasonably
be expected to cause the failure of that life-support device or system, or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.7
page 11
2004-05-19
11 Page |
Páginas | Total 11 Páginas | |
PDF Descargar | [ Datasheet IPS05N03LA.PDF ] |
Número de pieza | Descripción | Fabricantes |
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