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PDF IPS042G Data sheet ( Hoja de datos )
| Número de pieza | IPS042G | |
| Descripción | DUAL FULLY PROTECTED POWER MOSFET SWITCH | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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Data Sheet No.PD 60153-J
IPS042G
DUAL FULLY PROTECTED POWER MOSFET SWITCH
Features
• Over temperature shutdown
• Over current shutdown
• Active clamp
• Low current & logic level input
• E.S.D protection
Description
The IPS042G is a fully protected dual low side SMART
POWER MOSFET that features over-current, over-tem-
perature, ESD protection and drain to source active
clamp.This device combines a HEXFET® POWER
MOSFET and a gate driver. It offers full protection
and high reliability required in harsh environments.
The driver allows short switching times and provides
efficient protection by turning OFF the power MOSFET
when the temperature exceeds 165oC or when the
drain current reaches 2A. This device restarts once
the input is cycled. The avalanche capability is
significantly enhanced by the active clamp and cov-
ers most inductive load demagnetizations.
Product Summary
Rds(on)
V clamp
Ishutdown
Ton/Toff
500mΩ (max)
50V
2A
1.5µs
Package
8-Lead SOIC
Typical Connection
Load
R in series
(if needed)
IN
Q
Logic signal
control S
(Refer to lead assignment for correct pin configuration)
www.irf.com
D
S
1
1 page  
IPS042G
Vin 5 V
0V
Ids
I shutdown
Isd
t < T reset
t > T reset
T
Tsd
(165 °c)
T shutdown
Figure 1 - Timing diagram
Vin 90 %
10 %
Tr-in
90 %
Ids
10 %
Td on
Vds
tr
Td off
tf
Figure 2 - IN rise time & switching time definitions
Vin
T clamp
Ids
Vds clamp
Vds
( Vcc )
( see Appl . Notes to evaluate power dissipation )
Figure 3 - Active clamp waveforms
www.irf.com
Rem : V load is negative
during demagnetization
Vin
5v
0v
IN
L
R
D
S
V load
+
14 V
-
Vds
Ids
Figure 4 - Active clamp test circuit
5
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IPS042G.PDF ] | |
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