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PDF IPP09N03LA Data sheet ( Hoja de datos )
| Número de pieza | IPP09N03LA | |
| Descripción | OptiMOS 2 Power-Transistor | |
| Fabricantes | Infineon Technologies AG | |
| Logotipo |  |
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OptiMOS®2 Power-Transistor
Features
• Ideal for high-frequency dc/dc converters
• Qualified according to JEDEC1) for target applications
• N-channel - Logic level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• Superior thermal resistance
• 175 °C operating temperature
• dv /dt rated
• Pb-free lead plating; RoHS compliant
IPI09N03LA, IPP09N03LA
Product Summary
V DS
R DS(on),max
ID
25 V
9.2 mΩ
50 A
PG-TO262-3-1
PG-TO220-3-1
Type
IPI09N03LA
IPP09N03LA
Package
PG-TO262-3-1
PG-TO220-3-1
Marking
09N03LA
09N03LA
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C2)
T C=100 °C
Pulsed drain current
I D,pulse T C=25 °C3)
Avalanche energy, single pulse
E AS I D=45 A, R GS=25 Ω
Reverse diode dv /dt
dv /dt
I D=50 A, V DS=20 V,
di /dt =200 A/µs,
T j,max=175 °C
Gate source voltage4)
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1) J-STD20 and JESD22
Rev. 1.91
page 1
Value
50
46
350
75
6
±20
63
-55 ... 175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
2008-04-29
1 page  
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
70
10 V 4.5 V
60
50
IPI09N03LA, IPP09N03LA
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
30
3.2 V
3.5 V
3.8 V
4.1 V
4.1 V
25
20
40
30
20
10
0
0
3.8 V
3.5 V
12
V DS [V]
3.2 V
3V
2.8 V
3
15 4.5 V
10
10 V
5
0
0 10 20 30 40 50 60 70
I D [A]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
100
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
80
90
70
80
60
70
60 50
50 40
40
30
20
10
0
0
175 °C
25 °C
1234
V GS [V]
5
30
20
10
0
0
20 40 60
I D [A]
80
Rev. 1.91
page 5
2008-04-29
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IPP09N03LA.PDF ] | |
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