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Número de pieza | NTHD4P02FT1G | |
Descripción | Power MOSFET and Schottky Diode | |
Fabricantes | ON Semiconductor | |
Logotipo | ||
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No Preview Available ! NTHD4P02F
Power MOSFET and
Schottky Diode
−20 V, −3.0 A, Single P−Channel with
3.0 A Schottky Barrier Diode, ChipFETt
Features
• Leadless SMD Package Featuring a MOSFET and Schottky Diode
• 40% Smaller than TSOP−6 Package with Similar Thermal
Characteristics
• Independent Pinout to each Device to Ease Circuit Design
• Ultra Low VF Schottky
• Pb−Free Package is Available
Applications
• Li−Ion Battery Charging
• High Side DC−DC Conversion Circuits
• High Side Drive for Small Brushless DC Motors
• Power Management in Portable, Battery Powered Products
MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Units
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current
Steady TJ = 25°C
State TJ = 85°C
t v 5 s TJ = 25°C
Pulsed Drain
Current
tp = 10 ms
VDSS
VGS
ID
ID
IDM
−20
±12
−2.2
−1.6
−3.0
−9.0
V
V
A
A
A
Power Dissipation
Steady TJ = 25°C
State TJ = 85°C
t v 5 s TJ = 25°C
Continuous Source Current (Body Diode)
Operating Junction and Storage
Temperature
PD 1.1
0.6
2.1
IS −2.1
TJ, TSTG −55 to 150
W
A
°C
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260 °C
SCHOTTKY DIODE MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Peak Repetitive Reverse Voltage
VRRM
20
V
DC Blocking Voltage
VR 20 V
Average Rectified
Forward Current
Steady
State
tv5s
TJ = 25°C
IF
2.2 A
3.0 A
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
© Semiconductor Components Industries, LLC, 2004
October, 2004 − Rev. 4
1
http://onsemi.com
V(BR)DSS
−20 V
MOSFET
RDS(on) TYP
−130 mW @ −4.5 V
200 mW @ −2.5 V
VR MAX
20 V
SCHOTTKY DIODE
VF TYP
0.510 V
ID MAX
−3.0 A
IF MAX
3.0 A
SA
G
D
P−Channel MOSFET
C
SCHOTTKY DIODE
ChipFET
CASE 1206A
STYLE 3
PIN
CONNECTIONS
MARKING
DIAGRAM
1
A
2
A
S
3
G
4
8
C
7
C
6
D
D
5
1
2
3
4
C2 = Specific Device Code
M = Month Code
8
7
6
5
ORDERING INFORMATION
Device
Package
Shipping†
NTHD4P02FT1 ChipFET 3000/Tape & Reel
NTHD4P02FT1G ChipFET 3000/Tape & Reel
(Pb−free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
NTHD4P02F/D
1 page NTHD4P02F
TYPICAL SCHOTTKY PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
10 10
TJ = 150°C
1
1 TJ = 150°C
TJ = 25°C
0.1
0.20
0.40
TJ = −55°C
0.60
0.80
VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure 12. Typical Forward Voltage
1E−3
100E−6
10E−6
TJ = 150°C
TJ = 100°C
0.1
0.20
TJ = 25°C
0.40 0.60 0.80
VF, MAXIMUM INSTANTANEOUS FORWARD
VOLTAGE (VOLTS)
Figure 13. Maximum Forward Voltage
10E+0
1E+0
100E−3
TJ = 150°C
TJ = 100°C
1E−6
10E−3
100E−9
TJ = 25°C
10E−9
0
10
VR, REVERSE VOLTAGE (VOLTS)
Figure 14. Typical Reverse Current
1E−3
100E−6
20 0
TJ = 25°C
10
VR, REVERSE VOLTAGE (VOLTS)
Figure 15. Maximum Reverse Current
20
3.5
3
2.5
2
1.5
1
0.5
0
25
dc
square wave
Ipk/Io = p
Ipk/Io = 5
Ipk/Io = 10
Ipk/Io = 20
freq = 20 kHz
45 65 85 105 125 145
TL, LEAD TEMPERATURE (°C)
Figure 16. Current Derating
165
1.8
1.6
1.4 square wave dc
1.2 Ipk/Io = p
1 Ipk/Io = 5
0.8 Ipk/Io = 10
0.6
Ipk/Io = 20
0.4
0.2
0
0 0.5 1 1.5 2 2.5 3 3.5
IO, AVERAGE FORWARD CURRENT (AMPS)
Figure 17. Forward Power Dissipation
http://onsemi.com
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Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet NTHD4P02FT1G.PDF ] |
Número de pieza | Descripción | Fabricantes |
NTHD4P02FT1 | Power MOSFET and Schottky Diode | ON Semiconductor |
NTHD4P02FT1G | Power MOSFET and Schottky Diode | ON Semiconductor |
NTHD4P02FT1G | Power MOSFET and Schottky Diode | ON Semiconductor |
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