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PDF IPS0551T Data sheet ( Hoja de datos )
| Número de pieza | IPS0551T | |
| Descripción | FULLY PROTECTED POWER MOSFET SWITCH | |
| Fabricantes | International Rectifier | |
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Data Sheet No. PD60160-A
IPS0551T
FULLY PROTECTED POWER MOSFET SWITCH
Features
• Over temperature shutdown
• Over current shutdown
• Active clamp
• Low current & logic level input
• E.S.D protection
Description
The IPS0551T is a fully protected three terminal SMART
POWER MOSFET that features over-current, over-tem-
perature, ESD protection, and drain to source active
clamp. This device combines a HEXFET® POWER
MOSFET and a gate driver. It offers full protection and
high reliability required in harsh environments. The driver
allows short switching times and provides efficient protec-
tion by turning OFF the power MOSFET when temperature
exceeds 165oC or when the drain current reaches 100A.
The device restarts once the input is cycled. The ava-
lanche capability is significantly enhanced by the active
clamp and covers most inductive load demagnetiza-
tions.
Product Summary
Rds(on)
V clamp
Ishutdown
Ton/Toff
5.2mΩ (max)
40V
100A
4µs
Package
SUPER TO220
SUPER SMD220
Advance Information
Typical Connection
Load
R in s e r ie s
( if n e e d e d )
IN
L o g ic s ig n a l
contro l
D
S
www.irf.com
1
1 page  
IPS0551T
Vin 5 V
0V
Ids
I shutdown
Isd
t < T reset
t > T reset
T
Tsd
(165 °c)
T shutdown
90 %
Vin 10 %
Tr-in
90 %
Ids
10 %
Td on
Vds
tr
Td off
tf
Figure 1 - Timing diagram
Figure 2 - IN rise time & switching time definitions
Vin
T clamp
Ids
Vds clamp
Vds
( Vcc )
( see Appl . Notes to evaluate power dissipation )
Figure 3 - Active clamp waveforms
www.irf.com
Rem : V load is negative
during demagnetization
Vin
5v
0v
IN
L
R
D
S
V load
+
14 V
-
Vds
Ids
Figure 4 - Active clamp test circuit
5
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IPS0551T.PDF ] | |
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