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Número de pieza | FQP90N10V2 | |
Descripción | 100V N-Channel MOSFET | |
Fabricantes | Fairchild Semiconductor | |
Logotipo | ||
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No Preview Available ! FQP90N10V2/FQPF90N10V2
100V N-Channel MOSFET
QFET®
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for DC to DC converters, sychronous rectification,
and other applications lowest Rds(on) is required.
Features
• 90 A, 100V, RDS(on) = 0.01Ω @VGS = 10 V
• Low gate charge ( typical 147 nC)
• Low Crss ( typical 300 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
D
!
GDS
TO-220
FQP Series
GD S
TO-220F
FQPF Series
G!
●
◀▲
●
●
!
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS
Drain-Source Voltage
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM Drain Current - Pulsed
(Note 1)
VGSS
Gate-Source Voltage
EAS Single Pulsed Avalanche Energy
(Note 2)
IAR Avalanche Current
(Note 1)
EAR Repetitive Avalanche Energy
(Note 1)
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature.
FQP90N10V2 FQPF90N10V2
100
90 90 *
68 68 *
360 360 *
± 30
2430
90
25
4.5
250 83
1.67 0.55
-55 to +175
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Thermal Characteristics
Symbol
RθJC
RθJS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
FQP90N10V2
0.6
0.5
62.5
FQPF90N10V2
1.8
--
62.5
Units
°C/W
°C/W
°C/W
©2004 Fairchild Semiconductor Corporation
Rev. A1, April 2004
1 page Typical Characteristics (Continued)
100
D =0 .5
1 0 -1
1 0 -2
0.2
0 .1
0 .05
0 .0 2
0 .0 1
s in g le p u lse
N o tes :
1.
Z (t)
θJC
=
0 .6
°C /W
M ax.
2. D uty F actor, D = t /t
12
3.
T
JM
•
T
C
=
P
DM
*
Z (t)
θJC
PDM
t1
t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t , S q u a re W a ve P u lse D u ra tio n [se c]
1
101
Figure 11-1. Transient Thermal Response Curve for FQP90N10V2
100 D=0.5
0.2
0.1
1 0 -1
0 .0 5
0 .0 2
0 .0 1
1 0 -2
1 0 -5
N otes :
1. Z (t) = 1.8 °C /W M ax.
θJC
2. D uty Factor, D =t /t
12
3.
T
JM
•
T
C
=
P
DM
*
Z (t)
θJC
single pulse
PDM
t1
t2
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t , Square W ave Pulse D uration [sec]
1
101
Figure 11-2. Transient Thermal Response Curve for FQPF90N10V2
©2004 Fairchild Semiconductor Corporation
Rev. A1, April 2004
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet FQP90N10V2.PDF ] |
Número de pieza | Descripción | Fabricantes |
FQP90N10V2 | 100V N-Channel MOSFET | Fairchild Semiconductor |
FQP90N10V2 | 100V N-Channel MOSFET | Fairchild Semiconductor |
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