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PDF MMSD914 Data sheet ( Hoja de datos )

Número de pieza MMSD914
Descripción High Conductance Fast Diode
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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No Preview Available ! MMSD914 Hoja de datos, Descripción, Manual

MMSD914
General Description:
The high breakdown voltage, fast switching speed and high
forward conductance of this diode packaged in a SOD-123
Surface Mount package makes it desirable also as a general
purpose diode.
High Conductance
Fast Diode
Features:
Compact surface mount with same footprint as mini-melf.
400 milliwatt Power Dissipation package.
High Breakdown Voltage, Fast Switching Speed.
Typical capacitance less than 1.5 picofarad.
Ordering:
7 inch reel (178 mm); 8 mm Tape; 3,000 units per reel.
Absolute Maximum Ratings* TA = 25OC unless otherwise noted
Sym
Parameter
Value
Tstg
TJ
PD
ROJA
Wiv
IO
IF
iF(surge)
Storage Temperature
Operating Junction Temperature
Total Power Dissipation at TA = 25OC
Linear Derating Factor from TA = 25OC
Thermal Resistance Junction-to-Ambient
Working Inverse Voltage
Average Rectified Current
DC Forward Current (IF)
Peak Forward Surge Current (IFSM) Pulse Width = 1.0 Second
Pulse Width = 1.0 microsecond
-55 to +150
-55 to +150
400
3.2
312
75
200
600
1.0
2.0
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired
ELECTRICALLY THE SAME AS
THE FDLL914 DEVICE. SOURCED
FROM THE 1P PRODUCT.
Top Mark: 5D
1
Electrical Characteristics TA = 25OC unless otherwise noted
Units
OC
OC
W
mW/OC
OC/W
V
mA
mA
Amp
Amp
2
Actual Size
SYM
CHARACTERISTICS
BV Breakdown Voltage
IR Reverse Leakage
VF Forward Voltage
CT Capacitance
TRR Reverse Recovery Time
© 1999 Fairchild Semiconductor Corporation
MIN MAX UNITS
TEST CONDITIONS
100
75
25
50
5.0
1.0
4.0
4.0
V IR = 100 uA
V IR = 5.0 uA
nA VR = 20 V
uA VR = 20 V TA = 150OC
uA VR = 75 V
V IF = 10 mA
pF VR = 0.0 V, f = 1.0 MHz
ns IF = 10 mA VR = 6.0 V
IRR = 1.0 mA
RL = 100 Ohms
MMSD914 - Rev. A

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