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Número de pieza | SB30-09 | |
Descripción | 90V/ 3A Rectifier | |
Fabricantes | Sanyo Semicon Device | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de SB30-09 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
No Preview Available ! Ordering number:EN2586B
SB30-09
Schottky Barrier Diode (Twin Type · Cathode Common)
90V, 3A Rectifier
Applications
· High frequency rectification (switching regulators,
converters, choppers).
Features
· Low forward voltage (VF max=0.85V).
· Fast reverse recovery time (trr max=30ns).
· Low switching noise.
· Low leakage current and high reliability due to
highly reliable planar structure.
Package Dimensions
unit:mm
1159A
[SB30-09]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
VRRM
VRSM
IO
IFSM
Tj
Tstg
Conditions
50Hz, resistive load, Tc=105˚C
50Hz sine wave, 1 cycle
Electrical Characteristics at Ta = 25˚C
Parameter
Reverse Voltage
Forward Voltage
Reverse Current
Reverse Recovery Time
Thermal Resistance
Note:* Value per element
Electrical Connection
Symbol
Conditons
VR
VF
IR
trr
Rthj-c
IR=0.5mA, Tj=25˚C, *
IF=1.2A, Tj=25˚C, *
VR=45V, Tj=25˚C, *
IF=2A, Tj=25˚C, *,–dIF/dt=10A/µs
Junction-Case:Smoothed DC
A:Anode
C:Cathode
JEDEC:TO-220AB
EIAJ:SC-46
Ratings
90
95
3
40
–55 to +125
–55 to +125
Unit
V
V
A
A
˚C
˚C
Ratings
min typ
90
max
0.85
0.2
30
5.0
Unit
V
V
mA
ns
˚C/W
A:Anode
C:Cathode
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
41098HA (KT)/1218AT, TS No.2586-1/3
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet SB30-09.PDF ] |
Número de pieza | Descripción | Fabricantes |
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SB30-03T | 30V/ 3A Rectifier | Sanyo Semicon Device |
SB30-03Z | 30V/ 3A Rectifier | Sanyo Semicon Device |
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