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PDF SB30-03T Data sheet ( Hoja de datos )
| Número de pieza | SB30-03T | |
| Descripción | 30V/ 3A Rectifier | |
| Fabricantes | Sanyo Semicon Device | |
| Logotipo |  |
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Ordering number:EN4444
SB30-03T
Schottky Barrier Diode
30V, 3A Rectifier
Applications
· High frequency rectification (switching regulators,
converters, choppers).
Features
· Low forward voltage (VF max=0.55V).
· Fast reverse recovery time (trr max=30ns).
· Low switching noise.
· Low leakage current and high reliability due to
highly reliable planar structure.
Package Dimensions
unit:mm
1255A
[SB30-03T]
trr Test Circuit
unit:mm
1256A
[SB30-03T]
1:No Contact
2:Cathode
3:Anode
4:Cathode
SANYO:TP
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
VRRM
VRSM
IO
IFSM
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
50Hz, resistive load, Tc=110˚C
50Hz sine wave, 1 cycle
Parameter
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
Thermal Resistance (Junction-Ambient)
Thermal Resistance (Junction-Case)
Symbol
VR
VF
IR
C
trr
Rth(j-a)
Rthj(j-c)
Conditons
IR=1mA
IF=3A
VR=15V
VR=10V, f=1MHz
IF=IR=300mA, See sepcified Test Circuit
1:No Contact
2:Cathode
3:Anode
4:Cathode
SANYO:TP-FA
Ratings
30
35
3
20
–55 to +125
–55 to +125
Unit
V
V
A
A
˚C
˚C
Ratings
min typ
30
160
90
6
max
0.55
200
30
Unit
V
V
µA
pF
ns
˚C/W
˚C/W
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
41098HA (KT)/42094YH (KOTO) AX-8338 No.4444-1/3
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet SB30-03T.PDF ] | |
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