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PDF SAP08N Data sheet ( Hoja de datos )

Número de pieza SAP08N
Descripción Darlington transistors with built-in temperature compensation diodes for audio amplifier applications
Fabricantes Sanken electric 
Logotipo Sanken electric Logotipo



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No Preview Available ! SAP08N Hoja de datos, Descripción, Manual

Darlington transistors with
built-in temperature compensation diodes
for audio amplifier applications
SAPseries
Features
qBuilt-in temperature compensation diodes and one emitter resistor
qReal time temperature compensation
The temperature compensation diodes are mounted on one chip and placed in the center of the chip to
detect temperature rises directly.
qElimination of the temperature dependency of the idling current
The temperature coefficient of the diodes is optimized to have the idling current stabilized; thus one of
the fatal failure modes in conventional Darlington transistors, Thermal Runaway, is avoidable.
qSymmetrical design for the PNP and the NPN pinouts
The new design minimizes the length of the pattern layout, and output distortions are controlled.
qDarlington transistors, temperature compensation diodes and one emitter resistor are
incorporated in one package, so labor for parts insertion as well as the parts count is
reduced.
Line up
Part Number
SAP15P/SAP15N
SAP10P/SAP10N
SAP08P/SAP08N
PC (W)
150
100
80
VCEO ( V )
160
150
150
IC (A)
15
12
10
hFE Emitter resistor ()
5000 to 20000
0.22
5000 to 20000
0.22
5000 to 20000
0.22
sExternal Dimentions (Unit : mm)
15.4±0.3
9.9±0.2
3.2±0.2
4.5±0.2
1.6±0.2
(36°)
a
b
2.54±0.1
3.81±0.1
+0.2
1.35 –0.1
+0.2
0.65 –0.1
+0.2
0.8 –0.1
(7.62)
(12.7)
2.54±0.1
3.81±0.1
17.8±0.3
4±0.1
➀➁ ➂ ➃➄
1±0.1
+0.2
0.65–0.1
Weight: approx 8.3g
a. Part Number
b. Lot Number
sEquivalent Circuit Diagram
NPN
B
C
PNP
E
D Emitter resistor
RE: 0.22Typ.
R :70Typ.
S
SB
D R: 70Typ.
Emitter resistor
RE: 0.22Typ.
E
C
BD C S E
ES C DB

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SAP08N pdf
5. Destruction capacity of the built-in emitter resistor
The built-in resistor is fabricated with polysilicone on the chip for the SAP08P/N and a thick-film resistor is
used for the SAP10P/N and SAP15P/N. The latter, the thick-film resistor, has weaker destruction point in
the Pc area (especially for large current flowing area) rather than that of the transistor chip itself. This is
subject to the area beyond Safe Operating Area (S.O.A).
However, under the evaluation like a short circuit test in which the current exceeds the guaranteed value, it
may cause the emitter resistor to be destroyed before the transistor itself is destroyed.
Consequently, the current value (or time) that operates the protection circuit is to be set at lower than that of
discrete device configurations. In the application of car audio amplifiers, the same manners as the above
need to be considered because the large current is flowed at low impedance.
In addition, once the transistor falls into thermal runaway due to a soldering failure to the external VR added
between diodes or other failure manners, as the worst case, there may cause a resin crack or smoke emissions
by flare up. Flame retardant molding resin is used, and the material of the product is conformed to the most
sever standard UL94V0. However it is recommended that the careful consideration be given to a protection
circuit, and the protection circuits should be provided appropriately in due course.
If the operating conditions are not to be matched to the ratings, it is also recommended that the E (Emitter
resistor) terminal should be opened and the external emitter resistor should be added to the S (Sensing)
terminal shown as below. (However this is not applicable to the SAP08P/N because a thin inner lead is used
for S terminal.)
IC
Transistor destruction point
Thick-film resistor
destruction point
B
C
A.S.O.
Curve
S
D External
emitter resistor
E
Output terminal
VCE

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