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PDF K9K2G08Q0M-Y Data sheet ( Hoja de datos )

Número de pieza K9K2G08Q0M-Y
Descripción 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
Fabricantes Samsung semiconductor 
Logotipo Samsung semiconductor Logotipo



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No Preview Available ! K9K2G08Q0M-Y Hoja de datos, Descripción, Manual

K9K2G08U0M-VCB0,VIB0,FCB0,FIB0
K9K2G08Q0M-YCB0,YIB0,PCB0,PIB0 K9K2G16Q0M-YCB0,YIB0,PCB0,PIB0
K9K2G08U0M-YCB0,YIB0,PCB0,PIB0 K9K2G16U0M-YCB0,YIB0,PCB0,PIB0
FLASH MEMORY
Document Title
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
Revision History
Revision No History
0.0 1. Initial issue
0.1 1. IOL(R/B) of 1.8V device is changed.
-min. Value: 7mA -->3mA
-typ. Value: 8mA -->4mA
Draft Date Remark
Sep. 19.2001 Advance
Nov. 5. 2001
0.2 1. 5th cycle of ID is changed
: 40h --> 44h
Jan. 23.2002
0.3 1. Add WSOP Package Dimensions.
May. 29.2002
0.4 1. Max Icc value of 1.8V/3.3V device is changed.
- Max. value Icc1,Icc2,Icc3: 20mA --> 30mA (3.3V device)
- Max. value Icc1,Icc2,Icc3: 15mA --> 20mA (1.8V device)
0.5 1. Add the Rp vs tr ,tf & Rp vs ibusy graph for 1.8V device (Page 35)
2. Add the data protection Vcc guidence for 1.8V device - below about
1.1V. (Page 36)
The min. Vcc value 1.8V devices is changed.
0.6 K9K2GXXQ0M : Vcc 1.65V~1.95V --> 1.70V~1.95V
0.7 Pb-free Package is added.
K9K2G08U0M-FCB0,FIB0
K9K2G08Q0M-PCB0,PIB0
K9K2G08U0M-PCB0,PIB0
K9K2G16U0M-PCB0,PIB0
K9K2G16Q0M-PCB0,PIB0
0.8 Errata is added.(Front Page)-K9K2GXXQ0M
tWC tWP tWH tRC tREH tRP tREA tCEA
Specification 45 25 15 50 15 25 30 45
Relaxed value 80 60 20 60 80 60 60 75
1. The 3rd Byte ID after 90h ID read command is don’t cared.
0.9 The 5th Byte ID after 90h ID read command is deleted.
1.0 1. Added Addressing method for program operation
Sep. 12.2002
Nov. 22.2002
Mar. 6.2003
Mar. 13.2003
Mar. 17.2003
Apr. 9. 2003
Jan. 27. 2004
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the
right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you
have any questions, please contact the SAMSUNG branch office near your office.
1

1 page




K9K2G08Q0M-Y pdf
K9K2G08U0M-VCB0,VIB0,FCB0,FIB0
K9K2G08Q0M-YCB0,YIB0,PCB0,PIB0 K9K2G16Q0M-YCB0,YIB0,PCB0,PIB0
K9K2G08U0M-YCB0,YIB0,PCB0,PIB0 K9K2G16U0M-YCB0,YIB0,PCB0,PIB0
FLASH MEMORY
PIN CONFIGURATION (WSOP1)
K9K2G08U0M-VCB0,FCB0/VIB0,FIB0
N.C
N.C
DNU
N.C
N.C
N.C
R/B
RE
CE
DNU
N.C
Vcc
Vss
N.C
DNU
CLE
ALE
WE
WP
N.C
N.C
DNU
N.C
N.C
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48 N.C
47 N.C
46 DNU
45 N.C
44 I/O7
43 I/O6
42 I/O5
41 I/O4
40 N.C
39 DNU
38 N.C
37 Vcc
36 Vss
35 N.C
34 DNU
33 N.C
32 I/O3
31 I/O2
30 I/O1
29 I/O0
28 N.C
27 DNU
26 N.C
25 N.C
PACKAGE DIMENSIONS
48-PIN LEAD PLASTIC VERY VERY THIN SMALL OUT-LINE PACKAGE TYPE (I)
48 - WSOP1 - 1217F
Unit :mm
15.40±0.10
#1
0.70 MAX
0.58±0.04
#48
#24 #25
(0.01Min)
17.00±0.20
5
0.45~0.75

5 Page





K9K2G08Q0M-Y arduino
K9K2G08U0M-VCB0,VIB0,FCB0,FIB0
K9K2G08Q0M-YCB0,YIB0,PCB0,PIB0 K9K2G16Q0M-YCB0,YIB0,PCB0,PIB0
K9K2G08U0M-YCB0,YIB0,PCB0,PIB0 K9K2G16U0M-YCB0,YIB0,PCB0,PIB0
FLASH MEMORY
VALID BLOCK
Parameter
Valid Block Number
Symbol
NVB
Min
2008
Typ.
-
Max
2048
Unit
Blocks
NOTE :
1. The K9K2GXXX0M may include invalid blocks when first shipped. Additional invalid blocks may develop while being used. The number of valid
blocks is presented with both cases of invalid blocks considered. Invalid blocks are defined as blocks that contain one or more bad bits. Do not erase
or program factory-marked bad blocks. Refer to the attached technical notes for appropriate management of invalid blocks.
2. The 1st block, which is placed on 00h block address, is fully guaranteed to be a valid block and does not require Error Correction.
AC TEST CONDITION
(K9K2GXXX0M-XCB0 :TA=0 to 70°C, K9K2GXXX0M-XIB0:TA=-40 to 85°C
K9K2GXXQ0M : Vcc=1.70V~1.95V , K9K2GXXU0M : Vcc=2.7V~3.6V unless otherwise noted)
Parameter
K9K2GXXQ0M
K9K2GXXU0M
Input Pulse Levels
0V to Vcc
0.4V to 2.4V
Input Rise and Fall Times
5ns 5ns
Input and Output Timing Levels
Vcc/2
1.5V
K9K2GXXQ0M:Output Load (Vcc:1.8V +/-10%)
K9K2GXXU0M:Output Load (Vcc:3.0V +/-10%)
1 TTL GATE and CL=30pF
1 TTL GATE and CL=50pF
K9K2GXXU0M:Output Load (Vcc:3.3V +/-10%)
- 1 TTL GATE and CL=100pF
CAPACITANCE(TA=25°C, VCC=1.8V/3.3V, f=1.0MHz)
Item
Symbol
Test Condition
Min
Max
Unit
Input/Output Capacitance
CI/O
VIL=0V
-
10 pF
Input Capacitance
CIN VIN=0V
-
10 pF
NOTE : Capacitance is periodically sampled and not 100% tested.
MODE SELECTION
CLE
ALE
CE
WE
RE
WP PRE
Mode
HL L
LHL
HXX
Command Input
Read Mode
HXX
Address Input(5clock)
HL L
LHL
HHX
Command Input
Write Mode
HHX
Address Input(5clock)
LLL
H H X Data Input
L L LH
X X Data Output
X X X X H X X During Read(Busy)
X X X X X H X During Program(Busy)
X X X X X H X During Erase(Busy)
X X(1) X X X L X Write Protect
X X H X X 0V/VCC(2) 0V/VCC(2) Stand-by
NOTE : 1. X can be VIL or VIH.
2. WP and PRE should be biased to CMOS high or CMOS low for standby.
Program / Erase Characteristics
Parameter
Symbol
Min
Typ
Max
Unit
Program Time
tPROG
-
300 700
µs
Dummy Busy Time for Cache Program
tCBSY
3 700 µs
Number of Partial Program Cycles
in the Same Page
Main Array
Spare Array
Nop
-
-
-
-
4 cycles
4 cycles
Block Erase Time
tBERS
-
2
3 ms
NOTE : 1. Max. time of tCBSY depends on timing between internal program completion and data in
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