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PDF K9F5608U0M- Data sheet ( Hoja de datos )

Número de pieza K9F5608U0M-
Descripción 32M x 8 Bit NAND Flash Memory
Fabricantes Samsung semiconductor 
Logotipo Samsung semiconductor Logotipo



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No Preview Available ! K9F5608U0M- Hoja de datos, Descripción, Manual

ELECTRONICS
March. 2003
San 16 Banwol-Ri
Taean-Eup Hwasung- City
Kyungki Do, Korea
Tel.) 82 - 31 - 208 - 6463
Fax.) 82 - 31 -208 - 6799
512Mb/256Mb 1.8V NAND Flash Errata
Description : Some of AC characteristics are not meeting the specification.
> AC characteristics : Refer to Table
Affected Products : K9F1208Q0A-XXB0, K9F1216Q0A-XXB0
K9F5608Q0C-XXB0, K9F5616Q0C-XXB0
K9K1208Q0C-XXB0, K9K1216Q0C-XXB0
Improvement schedule : The components without this restriction will
be available from work week 23 or after.
Workaround : Relax the relevant timing parameters according to the table.
Table
UNIT : ns
Parameters
tWC tWH tWP tRC tREH tRP tREA tCEA
Specification
45 15 25 50 15 25 30 45
Relaxed Condition 80 20 60 80 20 60 60 75
Sincerely,
Product Planning & Application Eng.
Memory Division
Samsung Electronics Co.
1

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K9F5608U0M- pdf
K9F5608U0C-VCB0,VIB0,FCB0,FIB0
K9F5608Q0C-DCB0,DIB0,HCB0,HIB0
K9F5608U0C-YCB0,YIB0,PCB0,PIB0
K9F5608U0C-DCB0,DIB0,HCB0,HIB0
K9F5616Q0C-DCB0,DIB0,HCB0,HIB0
K9F5616U0C-YCB0,YIB0,PCB0,PIB0
K9F5616U0C-DCB0,DIB0,HCB0,HIB0
FLASH MEMORY
PIN CONFIGURATION (TBGA)
X8 K9F56XXX0C-DCB0,HCB0/DIB0,HIB0 X16
12 3 4 5 6
12 3 4 5 6
N.C N.C
N.C N.C
A N.C
B
C
D
E
F
G
H
N.C N.C
/WP ALE Vss /CE /WE R/B
NC /RE CLE NC NC NC
NC NC NC NC NC NC
NC NC NC NC NC NC
NC NC NC NC NC LOCKPRE
NC I/O0 NC NC NC Vcc
NC I/O1 NC VccQ I/O5 I/O7
Vss I/O2 I/O3 I/O4 I/O6 Vss
Top View
N.C N.C
N.C N.C
PACKAGE DIMENSIONS
N.C N.C
N.C N.C
63-Ball TBGA (measured in millimeters)
N.C N.C
N.C N.C
N.C
A
B
C
D
E
F
G
H
N.C N.C
/WP ALE Vss /CE /WE R/B
NC /RE CLE NC NC NC
NC NC NC NC NC NC
NC NC NC NC NC NC
NC NC NC I/O5 I/O7 LOCKPRE
I/O8 I/O1 I/O10 I/O12 IO14 Vcc
I/O0 I/O9 I/O3 VccQ I/O6 I/O15
Vss I/O2 I/O11 I/O4 I/O13 Vss
N.C N.C
N.C N.C
N.C N.C
N.C N.C
Top View
Top View
9.00±0.10
(Datum A)
Bottom View
9.00±0.10
0.80 x 9= 7.20
0.80 x 5= 4.00
0.80
654321
A
B
#A1
A
B
(Datum B) C
D
E
F
G
H
63-0.45±0.05
0.20 M A B
0.08MAX
2.00
Side View
9.00±0.10
0.45±0.05
4

5 Page





K9F5608U0M- arduino
K9F5608U0C-VCB0,VIB0,FCB0,FIB0
K9F5608Q0C-DCB0,DIB0,HCB0,HIB0
K9F5608U0C-YCB0,YIB0,PCB0,PIB0
K9F5608U0C-DCB0,DIB0,HCB0,HIB0
K9F5616Q0C-DCB0,DIB0,HCB0,HIB0
K9F5616U0C-YCB0,YIB0,PCB0,PIB0
K9F5616U0C-DCB0,DIB0,HCB0,HIB0
FLASH MEMORY
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltage on any pin relative to VSS
Temperature Under Bias
Storage Temperature
Short Circuit Current
K9F56XXX0C-XCB0
K9F56XXX0C-XIB0
K9F56XXX0C-XCB0
K9F56XXX0C-XIB0
Symbol
VIN/OUT
VCC
VCCQ
TBIAS
TSTG
Ios
Rating
K9F56XXQ0C(1.8V) K9F56XXU0C(3.3V)
-0.6 to + 2.45
-0.6 to + 4.6
-0.2 to + 2.45
-0.6 to + 4.6
-0.2 to + 2.45
-0.6 to + 4.6
-10 to +125
-40 to +125
-65 to +150
5
Unit
V
°C
°C
mA
NOTE :
1. Minimum DC voltage is -0.6V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.
Maximum DC voltage on input/output pins is VCC,+0.3V which, during transitions, may overshoot to VCC+2.0V for periods <20ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
RECOMMENDED OPERATING CONDITIONS
(Voltage reference to GND, K9F56XXX0C-XCB0 :TA=0 to 70°C, K9F56XXX0C-XIB0:TA=-40 to 85°C)
Parameter
Symbol
K9F56XXQ0C(1.8V)
Min Typ. Max
K9F56XXU0C(3.3V)
Min Typ. Max
Supply Voltage VCC 1.70 1.8 1.95 2.7 3.3 3.6
Supply Voltage
VCCQ
1.70
1.8
1.95
2.7
3.3
3.6
Supply Voltage
VSS
0
0
0
0
0
0
Unit
V
V
V
DC AND OPERATING CHARACTERISTICS(Recommended operating conditions otherwise noted.)
Parameter
Symbol
Test Conditions
K9F56XXQ0C(1.8V)
Min Typ Max
K9F56XXU0C(3.3V)
Min Typ Max
Unit
Operat- Sequential Read
ing
Current Program
Erase
ICC1
ICC2
ICC3
tRC=50ns, CE=VIL
IOUT=0mA
-
-
-
8 15
- 10
20
- 8 15 - 10 25 mA
-
8 15
- 10
25
Stand-by Current(TTL)
ISB1 CE=VIH, WP=0V/VCC
-
- 1 --
1
Stand-by Current(CMOS)
ISB2 CE=VCC-0.2, WP=0V/VCC
-
10 50
- 10
50
Input Leakage Current
ILI VIN=0 to Vcc(max)
-
- ±10 -
-
±10 µA
Output Leakage Current
ILO VOUT=0 to Vcc(max)
-
- ±10 -
-
±10
Input High Voltage
I/O pins
VIH
Except I/O pins
Input Low Voltage, All inputs VIL
-
VCCQ-0.4 -
VCCQ
2.0
+0.3
- VCCQ+0.3
VCC
VCC-0.4 -
2.0 - VCC+0.3
+0.3
-0.3 - 0.4 -0.3 - 0.8 V
Output High Voltage Level
Output Low Voltage Level
K9F56XXQ0C :IOH=-100µA
VOH VCCQ-0.1 -
K9F56XXU0C :IOH=-400µA
K9F56XXQ0C :IOL=100uA
VOL
K9F56XXU0C :IOL=2.1mA
-
-
- 2.4 -
0.1 - -
-
0.4
K9F56XXQ0C :VOL=0.1V
Output Low Current(R/B)
IOL(R/B)
3 4 - 8 10 - mA
K9F56XXU0C :VOL=0.4V
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