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PDF K9F5608U0B-DIB0 Data sheet ( Hoja de datos )

Número de pieza K9F5608U0B-DIB0
Descripción 32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
Fabricantes Samsung semiconductor 
Logotipo Samsung semiconductor Logotipo



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No Preview Available ! K9F5608U0B-DIB0 Hoja de datos, Descripción, Manual

K9F5608U0B-VCB0,VIB0,FCB0,FIB0
K9F5608Q0B-DCB0,DIB0,HCB0,HIB0
K9F5608U0B-YCB0,YIB0,PCB0,PIB0
K9F5608U0B-DCB0,DIB0,HCB0,HIB0
K9F5616Q0B-DCB0,DIB0,HCB0,HIB0
K9F5616U0B-YCB0,YIB0,PCB0,PIB0
K9F5616U0B-DCB0,DIB0,HCB0,HIB0
FLASH MEMORY
Document Title
32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
Revision History
Revision No. History
0.0 Initial issue.
Draft Date
May. 15th 2001
0.1 At Read2 operation in X16 device
: A3 ~ A7 are Don’t care ==> A3 ~ A7 are "L"
Sep. 20th 2001
0.2 1. IOL(R/B) of 1.8V device is changed.
Nov. 5th 2001
-min. Value: 7mA -->3mA
-typ. Value: 8mA -->4mA
2. AC parameter is changed.
tRP(min.) : 30ns --> 25ns
3. WP pin provides hardware protection and is recommended to be kept
at VIL during power-up and power-down and recovery time of minimum
1µs is required before internal circuit gets ready for any command
sequences as shown in Figure 15.
---> WP pin provides hardware protection and is recommended to be
kept at VIL during power-up and power-down and recovery time of
minimum 10µs is required before internal circuit gets ready for any
command sequences as shown in Figure 15.
0.3 1. X16 TSOP1 pin is changed.
: #36 pin is changed from VccQ to N.C .
Feb. 15th 2002
0.4
1. In X16 device, bad block information location is changed from 256th
byte to 256th and 261th byte.
Apr. 15th 2002
2. tAR1, tAR2 are merged to tAR.(page 12)
(before revision) min. tAR1 = 20ns , min. tAR2 = 50ns
(after revision) min. tAR = 10ns
3. min. tCLR is changed from 50ns to 10ns.(page12)
4. min. tREA is changed from 35ns to 30ns.(page12)
5. min. tWC is changed from 50ns to 45ns.(page12)
6. Unique ID for Copyright Protection is available
-The device includes one block sized OTP(One Time Programmable),
which can be used to increase system security or to provide
identification capabilities. Detailed information can be obtained by
contact with Samsung.
7. tRHZ is divide into tRHZ and tOH.(page 12)
- tRHZ : RE High to Output Hi-Z
- tOH : RE High to Output Hold
8. tCHZ is divide into tCHZ and tOH.(page 12)
- tCHZ : CE High to Output Hi-Z
- tOH : CE High to Output Hold
Remark
Advance
Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.
http://www.intl.samsungsemi.com/Memory/Flash/datasheets.html
The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have
any questions, please contact the SAMSUNG branch office near you.
1

1 page




K9F5608U0B-DIB0 pdf
K9F5608U0B-VCB0,VIB0,FCB0,FIB0
K9F5608Q0B-DCB0,DIB0,HCB0,HIB0
K9F5608U0B-YCB0,YIB0,PCB0,PIB0
K9F5608U0B-DCB0,DIB0,HCB0,HIB0
K9F5616Q0B-DCB0,DIB0,HCB0,HIB0
K9F5616U0B-YCB0,YIB0,PCB0,PIB0
K9F5616U0B-DCB0,DIB0,HCB0,HIB0
FLASH MEMORY
PIN CONFIGURATION (TBGA)
K9F56XXX0B-DCB0,HCB0/DIB0,HIB0
X8
X16
DNU DNU
DNU DNU
DNU
DNU DNU
/WP ALE Vss /CE /WE R/B
NC /RE CLE NC NC NC
NC NC NC NC NC NC
NC NC NC NC NC NC
NC NC NC NC NC NC
NC I/O0 NC NC NC Vcc
NC I/O1 NC VccQ I/O5 I/O7
Vss I/O2 I/O3 I/O4 I/O6 Vss
DNU DNU
DNU DNU
DNU DNU
(Top View)
PACKAGE DIMENSIONS
DNU DNU
63-Ball TBGA (measured in millimeters)
DNU DNU
DNU DNU
DNU
DNU DNU
/WP ALE Vss /CE /WE R/B
NC /RE CLE NC NC NC
NC NC NC NC NC NC
NC NC NC NC NC NC
NC NC NC I/O5 I/O7 NC
I/O8 I/O1 I/O10 I/O12 IO14 Vcc
I/O0 I/O9 I/O3 VccQ I/O6 I/O15
Vss I/O2 I/O11 I/O4 I/O13 Vss
DNU DNU
DNU DNU
DNU DNU
(Top View)
DNU DNU
Top View
9.00±0.10
(Datum A)
Bottom View
9.00±0.10
0.80 x9= 7.20
0.80 x5= 4.00
0.80
654321
A
B
#A1
A
B
(Datum B) C
D
E
F
G
H
63-0.45±0.05
0.20 M A B
0.08MAX
2.00
Side View
9.00±0.10
0.45±0.05
5

5 Page





K9F5608U0B-DIB0 arduino
K9F5608U0B-VCB0,VIB0,FCB0,FIB0
K9F5608Q0B-DCB0,DIB0,HCB0,HIB0
K9F5608U0B-YCB0,YIB0,PCB0,PIB0
K9F5608U0B-DCB0,DIB0,HCB0,HIB0
K9F5616Q0B-DCB0,DIB0,HCB0,HIB0
K9F5616U0B-YCB0,YIB0,PCB0,PIB0
K9F5616U0B-DCB0,DIB0,HCB0,HIB0
FLASH MEMORY
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltage on any pin relative to VSS
K9F56XXX0B-XCB0
Temperature Under Bias
K9F56XXX0B-XIB0
Storage Temperature
K9F56XXX0B-XCB0
K9F56XXX0B-XIB0
Short Circuit Current
Symbol
VIN/OUT
VCC
VCCQ
TBIAS
Rating
K9F56XXQ0B(1.8V) K9F56XXU0B(3.3V)
-0.6 to + 2.45
-0.6 to + 4.6
-0.2 to + 2.45
-0.6 to + 4.6
-0.2 to + 2.45
-0.6 to + 4.6
-10 to +125
-40 to +125
Unit
V
°C
TSTG
-65 to +150
°C
Ios 5 mA
NOTE:
1. Minimum DC voltage is -0.6V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.
Maximum DC voltage on input/output pins is VCC,+0.3V which, during transitions, may overshoot to VCC+2.0V for periods <20ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
RECOMMENDED OPERATING CONDITIONS
(Voltage reference to GND, K9F56XXX0B-XCB0 :TA=0 to 70°C, K9F56XXX0B-XIB0 :TA=-40 to 85°C)
Parameter
Symbol
K9F56XXQ0B(1.8V)
Min Typ. Max
K9F56XXU0B(3.3V)
Min Typ. Max
Supply Voltage VCC 1.70 1.8 1.95 2.7 3.3 3.6
Supply Voltage
VCCQ
1.70
1.8
1.95
2.7
3.3
3.6
Supply Voltage
VSS
0
0
0
0
0
0
Unit
V
V
V
DC AND OPERATING CHARACTERISTICS(Recommended operating conditions otherwise noted.)
Parameter
Symbol
Test Conditions
K9F56XXQ0B(1.8V)
Min Typ Max
K9F56XXU0B(3.3V)
Min Typ Max
Unit
Operat- Sequential Read
ing
Current Program
Erase
ICC1
ICC2
ICC3
tRC=50ns, CE=VIL
IOUT=0mA
-
-
-
8 15
- 10
20
- 8 15 - 10 20 mA
-
8 15
- 10
20
Stand-by Current(TTL)
ISB1 CE=VIH, WP=0V/VCC
-
- 1 --
1
Stand-by Current(CMOS)
ISB2 CE=VCC-0.2, WP=0V/VCC
-
10 50
- 10
50
Input Leakage Current
ILI VIN=0 to Vcc(max)
-
- ±10 -
-
±10 µA
Output Leakage Current
ILO VOUT=0 to Vcc(max)
-
- ±10 -
-
±10
Input High Voltage
I/O pins
VIH
Except I/O pins
Input Low Voltage, All inputs VIL
-
VCCQ-0.4 -
VCCQ
2.0
+0.3
- VCCQ+0.3
VCC
VCC-0.4 -
2.0 - VCC+0.3
+0.3
-0.3 - 0.4 -0.3 - 0.8 V
Output High Voltage Level
Output Low Voltage Level
K9F56XXQ0B :IOH=-100µA
VOH VCCQ-0.1 -
K9F56XXU0B :IOH=-400µA
K9F56XXQ0B :IOL=100uA
VOL
K9F56XXU0B :IOL=2.1mA
-
-
- 2.4 -
0.1 - -
-
0.4
K9F56XXQ0B :VOL=0.1V
Output Low Current(R/B)
IOL(R/B)
3 4 - 8 10 - mA
K9F56XXU0B :VOL=0.4V
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