DataSheet.es    


PDF K9F2808Q0C Data sheet ( Hoja de datos )

Número de pieza K9F2808Q0C
Descripción 16M x 8 Bit / 8M x 16 Bit NAND Flash Memory
Fabricantes Samsung semiconductor 
Logotipo Samsung semiconductor Logotipo



Hay una vista previa y un enlace de descarga de K9F2808Q0C (archivo pdf) en la parte inferior de esta página.


Total 29 Páginas

No Preview Available ! K9F2808Q0C Hoja de datos, Descripción, Manual

K9F2808Q0B-DCB0,DIB0 K9F2808U0B-YCB0,YIB0
K9F2808U0B-VCB0,VIB0 K9F2808U0B-DCB0,DIB0
Document Title
16M x 8 Bit NAND Flash Memory
FLASH MEMORY
Revision History
Revision No. History
0.0 Initial issue.
Draft Date
May 28’th 2001
0.1 K9F2808U0B(3.3V device)’s qualification is finished
Jun. 30th 2001
0.2 K9F2808Q0B (1.8V device)
- Changed typical read operation current (Icc1) from 8mA to 5mA
Jul. 30th 2001
- Changed typical program operation current (Icc2) from 8mA to 5mA
- Changed typical erase operation current (Icc3) from 8mA to 5mA
- Changed typical program time(tPROG) from 200us to 300us
- Changed ALE to RE Delay (ID read, tAR1) from 100ns to 20ns
- Changed CLE hold time(tCLH) from 10ns to 15ns
- Changed CE hold time(tCH) from 10ns to 15ns
- Changed ALE hold time(tALH) from 10ns to 15ns
- Changed Data hold time(tDH) from 10ns to 15ns
- Changed CE Access time(tCEA) from 45ns to 60ns
- Changed Read cycle time(tRC) from 50ns to 70ns
- Changed Write Cycle time(tWC) from 50ns to 70ns
- Changed RE Access time(tREA) from 35ns to 40ns
- Changed RE High Hold time(tREH) from 15ns to 20ns
- Changed WE High Hold time(tWH) from 15ns to 20ns
0.3 1. Device Code is changed
- TBGA package information : ’B’ --> ’D’
ex) K9F2808Q0B-BCB0 ,BIB0 --> K9F2808Q0B-DCB0,DIB0
K9F2808U0B-BCB0 ,BIB0 --> K9F2808Q0B-DCB0,DIB0
2. VIH ,VIL of K9F2808Q0B(1.8 device) is changed
Aug. 23th 2001
(before revision)
Input High Voltage
I/O pins
VccQ-0.4
VIH
Except I/O pins VCC-0.4
-
VccQ
VCC
Input Low Voltage,
All inputs
V IL
-
0 - 0.4
(after revision)
Input High Voltage
I/O pins
VccQ-0.4
VIH
Except I/O pins VCC-0.4
-
Input Low Voltage,
All inputs
V IL
-
-0.3 -
VccQ
+0.3
VCC
+0.3
0.4
Remark
Advance
K9F2808Q0B
: Preliminary
Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.
http://www.intl.samsungsemi.com/Memory/Flash/datasheets.html
The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have
any questions, please contact the SAMSUNG branch office near you.
1

1 page




K9F2808Q0C pdf
K9F2808Q0B-DCB0,DIB0 K9F2808U0B-YCB0,YIB0
K9F2808U0B-VCB0,VIB0 K9F2808U0B-DCB0,DIB0
PIN CONFIGURATION (TBGA)
K9F2808X0B-DCB0/DIB0
FLASH MEMORY
DNU DNU
DNU DNU
DNU
DNU DNU
/WP ALE NC /CE /WE R/B
NC /RE CLE NC NC NC
NC NC NC NC NC NC
NC NC NC NC NC NC
NC NC NC NC NC NC
NC I/O0 NC NC NC Vcc
NC I/O1 NC VccQ I/O5 I/O7
Vss I/O2 I/O3 I/O4 I/O6 Vss
DNU DNU
DNU DNU
DNU DNU
DNU DNU
PACKAGE DIMENSIONS
(Top View)
63-Ball TBGA (measured in millimeters)
Top View
9.00±0.10
(Datum A)
Bottom View
9.00 ±0.10
0.80 x9= 7.20
0.80 x5= 4.00
0.80
65432
1
A
B
#A1
A
B
(Datum B) C
D
E
F
G
H
63-0.45 ±0.05
0.20 M A B
0.08MAX
2.00
Side View
9.00 ±0.10
0.45±0.05
5

5 Page





K9F2808Q0C arduino
K9F2808Q0B-DCB0,DIB0 K9F2808U0B-YCB0,YIB0
K9F2808U0B-VCB0,VIB0 K9F2808U0B-DCB0,DIB0
FLASH MEMORY
VALID BLOCK
Parameter
Valid Block Number
Symbol
NVB
Min
1004
Typ.
-
Max
1024
Unit
Blocks
NOTE:
1. The K9F2808X0B may include invalid blocks when first shipped. Additional invalid blocks may develop while being used. The number of valid blocks
is presented with both cases of invalid blocks considered. Invalid blocks are defined as blocks that contain one or more bad bits. Do not erase or
program factory-marked bad blocks. Refer to the attached technical notes for a appropriate management of invalid blocks.
2. The 1st block, which is placed on 00h block address, is fully guaranteed to be a valid block, does not require Error Correction.
AC TEST CONDITION
(K9F2808X0B-YCB0, DCB0 :TA=0 to 70°C, K9F2808X0B-YIB0,DIB0:TA=-40 to 85°C
K9F2808Q0B : Vcc=1.7V~1.9V , K9F2808U0B : Vcc=2.7V~3.6V unless otherwise noted)
Parameter
K9F2808Q0B
K9F2808U0B
Input Pulse Levels
0V to VccQ
0.4V to 2.4V
Input Rise and Fall Times
5ns 5ns
Input and Output Timing Levels
VccQ/2
1.5V
K9F2808Q0B:Output Load (VccQ:1.8V +/-10%)
K9F2808U0B:Output Load (VccQ:3.0V +/-10%)
1 TTL GATE and CL=30pF
1 TTL GATE and CL=50pF
K9F2808U0B:Output Load (VccQ:3.3V +/-10%)
-
1 TTL GATE and CL=100pF
CAPACITANCE(TA=25°C, VCC=1.8V/3.3V, f=1.0MHz)
Item
Symbol
Test Condition
Min
Max
Unit
Input/Output Capacitance
C I/O
VIL =0V
-
10 pF
Input Capacitance
CIN VIN=0V
-
10 pF
NOTE : Capacitance is periodically sampled and not 100% tested.
MODE SELECTION
CLE
ALE
CE
WE
RE
WP
Mode
HLL
LHL
HX
Command Input
Read Mode
HX
Address Input(3clock)
HLL
LHL
HH
Command Input
Write Mode
HH
Address Input(3clock)
LLL
H H Data Input
LLLH
X Data Output
L L L H H X During Read(Busy) on K9F2808U0B_Y or K9F2808U0B_V
During Read(Busy) on the devices except K9F2808U0B_Y
XX XXHX
and K9F2808U0B_V
X X X X X H During Program(Busy)
X X X X X H During Erase(Busy)
X X(1) X X X L Write Protect
X X H X X 0V/V CC(2) Stand-by
NOTE : 1. X can be VIL or VIH.
2. WP should be biased to CMOS high or CMOS low for standby.
Program/Erase Characteristics
Program Time
Parameter
Number of Partial Program Cycles
in the Same Page
Block Erase Time
Symbol
Min
Typ
Max
tPROG
K9F2808Q0B:3 00
-
K9F2808U0B:200
500
Main Array
--2
Nop
Spare Array
--3
tBERS
-
2
3
Unit
µs
cycles
cycles
ms
11

11 Page







PáginasTotal 29 Páginas
PDF Descargar[ Datasheet K9F2808Q0C.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
K9F2808Q0B16M x 8 Bit NAND Flash MemorySamsung semiconductor
Samsung semiconductor
K9F2808Q0B-D16M x 8 Bit NAND Flash MemorySamsung semiconductor
Samsung semiconductor
K9F2808Q0B-DCB016M x 8 Bit NAND Flash MemorySamsung semiconductor
Samsung semiconductor
K9F2808Q0B-DIB016M x 8 Bit NAND Flash MemorySamsung semiconductor
Samsung semiconductor

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar