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PDF K9F1G08U0M-YCB0 Data sheet ( Hoja de datos )

Número de pieza K9F1G08U0M-YCB0
Descripción 1Gb Gb 1.8V NAND Flash Errata
Fabricantes Samsung semiconductor 
Logotipo Samsung semiconductor Logotipo



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No Preview Available ! K9F1G08U0M-YCB0 Hoja de datos, Descripción, Manual

ELECTRONICS
March. 2003
San 16 Banwol-Ri
Taean-Eup Hwasung- City
Kyungki Do, Korea
Tel.) 82 - 31 - 208 - 6463
Fax.) 82 - 31 -208 - 6799
1Gb 1.8V NAND Flash Errata
Description : Some of AC characteristics are not meeting the specification.
> AC characteristics : Refer to Table
Affected Products : K9F1G08Q0M-YCB0/YIB0, K9F1G16Q0M-YCB0/YIB0
K9K2G08Q0M-YCB0/YIB0, K9K2G16Q0M-YCB0/YIB0
Improvement schedule : The components targeted to meet the specification
is scheduled to be available by workweek 25 along
with the final specification values.
Workaround : Relax the relevant timing parameters according to the table.
Table
Parameters
tWC
Specification
45
Relaxed Condition 80
tWH
15
20
tWP
25
60
UNIT : ns
tRC tREH tRP tREA tCEA
50 15 25 30 45
80 20 60 60 75
Sincerely,
Product Planning & Application Eng.
Memory Division
Samsung Electronics Co.
1

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K9F1G08U0M-YCB0 pdf
K9F1G08U0M-VCB0,VIB0,FCB0,FIB0
K9F1G08Q0M-YCB0,YIB0,PCB0,PIB0 K9F1G16Q0M-YCB0,YIB0,PCB0,PIB0
K9F1G08U0M-YCB0,YIB0,PCB0,PIB0 K9F1G16U0M-YCB0,YIB0,PCB0,PIB0
FLASH MEMORY
PIN CONFIGURATION (TSOP1)
X16 X8
K9F1GXXX0M-YCB0,PCB0/YIB0,PIB0
N.C
N.C
N.C
N.C
N.C
N.C
R/B
RE
CE
N.C
N.C
Vcc
Vss
N.C
N.C
CLE
ALE
WE
WP
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
R/B
RE
CE
N.C
N.C
Vcc
Vss
N.C
N.C
CLE
ALE
WE
WP
N.C
N.C
N.C
N.C
N.C
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48-pin TSOP1
Standard Type
12mm x 20mm
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
X8
N.C
N.C
N.C
N.C
I/O7
I/O6
I/O5
I/O4
N.C
N.C
PRE
Vcc
Vss
N.C
N.C
N.C
I/O3
I/O2
I/O1
I/O0
N.C
N.C
N.C
N.C
X16
Vss
I/O15
I/O7
I/O14
I/O6
I/O13
I/O5
I/O12
I/O4
N.C
PRE
Vcc
N.C
N.C
N.C
I/O11
I/O3
I/O10
I/O2
I/O9
I/O1
I/O8
I/O0
Vss
PACKAGE DIMENSIONS
48-PIN LEAD/LEAD FREE PLASTIC THIN SMALL OUT-LINE PACKAGE TYPE(I)
48 - TSOP1 - 1220F
Unit :mm/Inch
20.00±0.20
0.787±0.008
#1 #48
#24
0~8¡Æ
0.45~0.75
0.018~0.030
18.40±0.10
0.724±0.004
#25
1.00±0.05
0.039±0.002
01..02407MAX
0.05
0.002
MIN
(
0.50
0.020
)
SAMSUNG
4

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K9F1G08U0M-YCB0 arduino
K9F1G08U0M-VCB0,VIB0,FCB0,FIB0
K9F1G08Q0M-YCB0,YIB0,PCB0,PIB0 K9F1G16Q0M-YCB0,YIB0,PCB0,PIB0
K9F1G08U0M-YCB0,YIB0,PCB0,PIB0 K9F1G16U0M-YCB0,YIB0,PCB0,PIB0
FLASH MEMORY
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltage on any pin relative to VSS
K9F1GXXX0M-XCB0
Temperature Under Bias
K9F1GXXX0M-XIB0
Storage Temperature
K9F1GXXX0M-XCB0
K9F1GXXX0M-XIB0
Short Circuit Current
Symbol
VIN/OUT
VCC
TBIAS
TSTG
Ios
Rating
K9F1GXXQ0M(1.8V) K9F1GXXU0M(3.3V)
-0.6 to + 2.45
-0.6 to + 4.6
-0.2 to + 2.45
-0.6 to + 4.6
-10 to +125
-40 to +125
Unit
V
°C
-65 to +150
°C
5 mA
NOTE :
1. Minimum DC voltage is -0.6V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.
Maximum DC voltage on input/output pins is VCC,+0.3V which, during transitions, may overshoot to VCC+2.0V for periods <20ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
RECOMMENDED OPERATING CONDITIONS
(Voltage reference to GND, K9F1GXXX0M-XCB0 :TA=0 to 70°C, K9F1GXXX0M-XIB0:TA=-40 to 85°C)
Parameter
Symbol
K9F1GXXQ0M(1.8V)
Min Typ. Max
K9F1GXXU0M(3.3V)
Min Typ. Max
Supply Voltage VCC 1.70 1.8 1.95 2.7 3.3 3.6
Supply Voltage
VSS
0
0
0
0
0
0
Unit
V
V
DC AND OPERATING CHARACTERISTICS(Recommended operating conditions otherwise noted.)
Parameter
Symbol
Test Conditions
K9F1GXXQ0M(1.8V) K9F1GXXU0M(3.3V) Unit
Min Typ Max Min Typ Max
Operat- Page Read with
ing Serial Access
Current Program
Erase
ICC1
ICC2
ICC3
tRC=50ns, CE=VIL
IOUT=0mA
-
-
-
5 15
- 10
20
- 5 15 - 10 20 mA
-
5 15
- 10
20
Stand-by Current(TTL)
ISB1 CE=VIH, WP=PRE=0V/VCC
-
- 1 --
1
Stand-by Current(CMOS)
Input Leakage Current
Output Leakage Current
ISB2
ILI
ILO
CE=VCC-0.2,
WP=PRE=0V/VCC
VIN=0 to Vcc(max)
VOUT=0 to Vcc(max)
-
20 100 - 20
100
-
- ±20 -
-
±20 µA
-
- ±20 -
-
±20
Input High Voltage
VIH
VCC+
-
VCC-0.4 -
2.0 - VCC+0.3
0.3
Input Low Voltage, All inputs
VIL
-
-0.3 - 0.4 -0.3 - 0.8
K9F1GXXQ0M :IOH=-100µA
V
Output High Voltage Level
VOH
Vcc-0.1 -
- 2.4 -
-
K9F1GXXU0M :IOH=-400µA
Output Low Voltage Level
K9F1GXXQ0M :IOL=100uA
VOL
K9F1GXXU0M :IOL=2.1mA
-
- 0.1 - -
0.4
K9F1GXXQ0M :VOL=0.1V
Output Low Current(R/B)
IOL(R/B)
3 4 - 8 10 - mA
K9F1GXXU0M :VOL=0.4V
SAMSUNG
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