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PDF K9F1G08Q0M Data sheet ( Hoja de datos )
| Número de pieza | K9F1G08Q0M | |
| Descripción | 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory | |
| Fabricantes | Samsung semiconductor | |
| Logotipo |  |
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K9F1G08U0M K9F1G16U0M
Document Title
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
FLASH MEMORY
Revision History
Revision No History
0.0 1. Initial issue
Draft Date
July. 5. 2001
Remark
Advance
0.1 1. Iol(R/B) of 1.8V is changed.
- min. value : 7mA --> 3mA
- Typ. value : 8mA --> 4mA
Nov. 5. 2001
2. AC parameter is changed.
tRP(min.) : 30ns --> 25ns
3. A recovery time of minimum 1µs is required before internal circuit gets
ready for any command sequences as shown in Figure 17.
---> A recovery time of minimum 10µs is required before internal circuit gets
ready for any command sequences as shown in Figure 17.
Dec. 4. 2001
0.2 1. ALE status fault in ’Random data out in a page’ timing diagram(page 19)
is fixed.
0.3 1. tAR1, tAR2 are merged to tAR.(Page11)
(Before revision) min. tAR1 = 10ns , min. tAR2 = 50ns
(After revision) min. tAR = 10ns
2. min. tCLR is changed from 50ns to 10ns.(Page11)
3. min. tREA is changed from 35ns to 30ns.(Page11)
4. min. tWC is changed from 50ns to 45ns.(Page11)
5. tRHZ is devided into tRHZ and tOH.(Page11)
- tRHZ : RE High to Output Hi-Z
- tOH : RE High to Output Hold
6. tCHZ is devided into tCHZ and tOH.(Page11)
- tCHZ : CE High to Output Hi-Z
- tOH : CE High to Output Hold
Apr. 25. 2002
0.4
1. Add the Rp vs tr ,tf & Rp vs ibusy graph for 1.8V device (Page 35)
Nov. 22.2002
2. Add the data protection Vcc guidence for 1.8V device - below about
1.1V. (Page 36)
0.5 1. The min. Vcc value 1.8V devices is changed.
K9F1GXXQ0M : Vcc 1.65V~1.95V --> 1.70V~1.95V
Mar. 6.2003
0.6 Pb-free Package is added.
K9F1G08U0M-FCB0,FIB0
K9F1G08Q0M-PCB0,PIB0
K9F1G08U0M-PCB0,PIB0
K9F1G16U0M-PCB0,PIB0
K9F1G16Q0M-PCB0,PIB0
Mar. 13.2003
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the
right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you
have any questions, please contact the SAMSUNG branch office near your office.
1
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FLASH MEMORY
PIN CONFIGURATION (WSOP1)
K9F1G08U0M-VCB0,FCB0/VIB0,FIB0
N.C
N.C
DNU
N.C
N.C
N.C
R/B
RE
CE
DNU
N.C
Vcc
Vss
N.C
DNU
CLE
ALE
WE
WP
N.C
N.C
DNU
N.C
N.C
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48 N.C
47 N.C
46 DNU
45 N.C
44 I/O7
43 I/O6
42 I/O5
41 I/O4
40 N.C
39 DNU
38 N.C
37 Vcc
36 Vss
35 N.C
34 DNU
33 N.C
32 I/O3
31 I/O2
30 I/O1
29 I/O0
28 N.C
27 DNU
26 N.C
25 N.C
PACKAGE DIMENSIONS
48-PIN LEAD PLASTIC VERY VERY THIN SMALL OUT-LINE PACKAGE TYPE (I)
48 - WSOP1 - 1217F
Unit :mm
15.40±0.10
#1
0.70 MAX
0.58±0.04
#48
#24 #25
(0.01Min)
17.00±0.20
5
0.45~0.75
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K9F1G08D0M K9F1G16D0M
K9F1G08U0M K9F1G16U0M
FLASH MEMORY
DC AND OPERATING CHARACTERISTICS(Recommended operating conditions otherwise noted.)
K9F1GXXX0M
Parameter
Symbol
Test Conditions
1.8V
2.65V
3.3V
Unit
Min Typ Max Min Typ Max Min Typ Max
Page Read with
Operating Serial Access
Current Program
Erase
ICC1
tRC=50ns, CE=VIL
IOUT=0mA
ICC2
-
ICC3
-
- 8 15 - 10 20 - 10 20
- 8 15 - 10 20 - 10 20 mA
- 8 15 - 10 20 - 10 20
Stand-by Current(TTL)
ISB1 CE=VIH, WP=PRE=0V/VCC - - 1 - - 1 - - 1
Stand-by Current(CMOS)
Input Leakage Current
Output Leakage Current
CE=VCC-0.2,
ISB2
WP=PRE=0V/VCC
ILI VIN=0 to Vcc(max)
ILO VOUT=0 to Vcc(max)
- 10 50 - 10 50 - 10 50
- - ±10 - - ±10 - - ±10 µA
- - ±10 - - ±10 - - ±10
Input High Voltage
VIH*
VCC
VCC VCC
VCC
VCC
- - - 2.0 -
-0.4 +0.3 -0.4
+0.3
+0.3
Input Low Voltage, All inputs VIL*
- -0.3 - 0.4 -0.3 - 0.5 -0.3 - 0.8
K9F1GXXQ0M :IOH=-100µA
Vcc
Output High Voltage Level VOH K9F1GXXD0M :IOH=-100µA
-
VCCQ
--
- 2.4 -
-
V
-0.1 -0.4
K9F1GXXU0M :IOH=-400µA
Output Low Voltage Level
K9F1GXXQ0M :IOL=100uA
VOL K9F1GXXD0M :IOL=100µA
K9F1GXXU0M :IOL=2.1mA
-
- 0.1 -
- 0.4 -
- 0.4
K9F1GXXQ0M :VOL=0.1V
Output Low Current(R/B) IOL(R/B) K9F1GXXD0M :VOL=0.1V 3 4 - 3 4 - 8 10 - mA
K9F1GXXU0M :VOL=0.4V
NOTE : VIL can undershoot to -0.4V and VIH can overshoot to VCC +0.4V for durations of 20 ns or less.
11
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Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| K9F1G08Q0A | FLASH MEMORY | Samsung semiconductor |
| K9F1G08Q0M | 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory | Samsung semiconductor |
| K9F1G08Q0M-PCB0 | 1Gb Gb 1.8V NAND Flash Errata | Samsung semiconductor |
| K9F1G08Q0M-PIB0 | 1Gb Gb 1.8V NAND Flash Errata | Samsung semiconductor |
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