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PDF K9F1208U0M-YIB0 Data sheet ( Hoja de datos )

Número de pieza K9F1208U0M-YIB0
Descripción 64M x 8 Bit NAND Flash Memory
Fabricantes Samsung semiconductor 
Logotipo Samsung semiconductor Logotipo



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No Preview Available ! K9F1208U0M-YIB0 Hoja de datos, Descripción, Manual

K9F1208U0M-YCB0, K9F1208U0M-YIB0
Document Title
64M x 8 Bit NAND Flash Memory
FLASH MEMORY
Revision History
Revision No History
Draft Date Remark
0.0 1. Initial issue
Oct. 27th 2000 Advanced
Information
0.1 1. Renamed GND input (pin # 6) on behalf of SE (pin # 6)
Dec. 5th 2000
- The SE input controls the access of the spare area. When SE is high,
the spare area is not accessible for reading or programming. SE is rec
ommended to be coupled to GND or Vcc and should not be toggled
during reading or programming.
=> Connect this input pin to GND or set to static low state unless the
sequential read mode excluding spare area is used.
2. Updated operation for tRST timing
- If reset command(FFh) is written at Ready state, the device goes into
Busy for maximum 5us.
0.2 1. Changed GND input (pin # 6) pin to N.C ( No Connection).
- The pin # 6 is don’t-cared regardless of external logic input level
and is fixed as low internally.
Dec. 15th 2000
0.3 1. Changed plane address in Copy-Back Program
Jan. 8th 2001
- A24 and A25 must be the same between source and target page
=> A14 and A15 must be the same between source and target page
0.4 1. Changed DC characteristics
Apr. 7th 2001
Parameter
Min Typ
Max Unit
Operating Sequential Read
Current Program
-
-
10 20->30
10
20->30
mA
Erase
- 10 20->30
2. Unified access timing parameter definition for multiple operating modes
- Changed AC characteristics (Before)
Parameter
Symbol Min Max Unit
ALE to RE Delay( ID read ) tAR1 100 -
CE to RE Delay( ID read)
tCR 100 -
RE Low to Status Output
tRSTO
- 35 ns
CE Low to Status Output
tCSTO
- 45
RE access time(Read ID) tREADID - 35
- AC characteristics (After)
. Deleted tCR,tRSTO, tCSTO and tREADID / Added tCEA
Parameter
Symbol
Min
ALE to RE Delay( ID read )
tAR1
10
CE Access Time
tCEA
-
Max
-
45
Unit
ns
1

1 page




K9F1208U0M-YIB0 pdf
K9F1208U0M-YCB0, K9F1208U0M-YIB0
Revision No History
0.9 To clarify the meaning of parameter,
1. tRHZ is devide into tRHZ and tOH.(page 12)
- tRHZ : RE High to Output Hi-Z
- tOH : RE High to Output Hold
2. tCHZ is devide into tCHZ and tOH.(page 12)
- tCHZ : CE High to Output Hi-Z
- tOH : CE High to Output Hold
FLASH MEMORY
Draft Date Remark
Apr. 20th 2002
5

5 Page





K9F1208U0M-YIB0 arduino
K9F1208U0M-YCB0, K9F1208U0M-YIB0
FLASH MEMORY
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
Voltage on any pin relative to VSS
VIN -0.6 to + 4.6
VCC -0.6 to + 4.6
V
Temperature Under Bias
K9F1208U0M-YCB0
K9F1208U0M-YIB0
TBIAS
-10 to +125
-40 to +125
°C
Storage Temperature
TSTG
-65 to +150
°C
NOTE :
1. Minimum DC voltage is -0.6V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.
Maximum DC voltage on input/output pins is VCC,+0.3V which, during transitions, may overshoot to VCC+2.0V for periods <20ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Recommended Operating Conditions
(Voltage reference to GND, K9F1208U0M-YCB0 :TA=0 to 70°C, K9F1208U0M-YIB0:TA=-40 to 85°C)
Parameter
Symbol
Min
Typ.
Max
Supply Voltage
VCC 2.7 3.3 3.6
Supply Voltage
VSS 0 0 0
Unit
V
V
Dc and Operating Characteristics(Recommended operating conditions otherwise noted.)
Parameter
Symbol
Test Conditions
Min Typ
Max
Operating Sequential Read
Current Program
ICC1
ICC2
tRC=50ns, CE=VIL, IOUT=0mA
-
- 10
- 10
30
30
Erase
ICC3
-
- 10
30
Stand-by Current(TTL)
ISB1 CE=VIH, WP= 0V/VCC
--
1
Stand-by Current(CMOS)
Input Leakage Current
ISB2
ILI
CE=VCC-0.2, WP = 0V/VCC
VIN=0 to 3.6V
- 10
50
- - ±10
Output Leakage Current
ILO VOUT=0 to 3.6V
- - ±10
Input High Voltage
VIH - 2.0 - VCC+0.3
Input Low Voltage, All inputs
Output High Voltage Level
VIL
VOH
IOH=-400µA
-
-0.3 -
2.4 -
0.8
-
Output Low Voltage Level
VOL IOL=2.1mA
--
0.4
Output Low Current(R/B)
IOL(R/B) VOL=0.4V
8 10
-
Unit
mA
µA
V
mA
11

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