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PDF K6X4016T3F-TQ70 Data sheet ( Hoja de datos )

Número de pieza K6X4016T3F-TQ70
Descripción 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
Fabricantes Samsung semiconductor 
Logotipo Samsung semiconductor Logotipo



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K6X4016T3F Family
Document Title
256Kx16 bit Low Power and Low Voltage CMOS Static RAM
CMOS SRAM
Revision History
Revision No History
0.0 Initial draft
Draft Date
July 29, 2002
0.1 Revised
- Added Commercial product
- Deleted 44-TSOP2-400R Package Type.
- Added 55ns product(@ 3.0V~3.6V)
December 2, 2002
1.0 Finalized
August 8, 2003
Revised
- Changed ICC(Operating power supply current) from 4mA to 2mA
- Changed ICC1(Average operating current) from 4mA to 3mA
- Changed ICC2(Average operating current) from 40mA to 25mA
- Changed ISB1(Standby Current(CMOS), Commercial)
from 15µA to 10µA
- Changed ISB1(Standby Current(CMOS), Industrial)
from 20µA to 10µA
- Changed ISB1(Standby Current(CMOS), Automotive)
from 30µA to 20µA
- Changed IDR(Data retention current, Commercial)
from 15µA to 10µA
- Changed IDR(Data retention current, Industrial)
from 20µA to 10µA
- Changed IDR(Data retention current, Automotive)
from 30µA to 20µA
Remark
Preliminary
Preliminary
Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
1 Revision 1.0
August 2003

1 page




K6X4016T3F-TQ70 pdf
K6X4016T3F Family
CMOS SRAM
AC OPERATING CONDITIONS
TEST CONDITIONS( Test Load and Input/Output Reference)
Input pulse level: 0.4 to 2.2V
Input rising and falling time: 5ns
Input and output reference voltage: 1.5V
Output load(see right): CL=100pF+1TTL
CL=30pF+1TTL
CL1)
1.Including scope and jig capacitance
AC CHARACTERISTICS
( VCC=2.7~3.6V, Commercial product: TA=0 to 70°C, Industrial product: TA=-40 to 85°C, Automotive product: TA=-40 to 125°C )
Parameter List
Symbol
Read cycle time
tRC
Address access time
tAA
Chip select to output
tCO
Output enable to valid output
tOE
LB, UB valid to data output
tBA
Read Chip select to low-Z output
Output enable to low-Z output
tLZ
tOLZ
LB, UB enable to low-Z output
tBLZ
Output hold from address change
tOH
Chip disable to high-Z output
tHZ
OE disable to high-Z output
tOHZ
LB, UB disable to high-Z output
tBHZ
Write cycle time
tWC
Chip select to end of write
tCW
Address set-up time
tAS
Address valid to end of write
tAW
Write
Write pulse width
Write recovery time
tWP
tWR
Write to output high-Z
tWHZ
Data to write time overlap
tDW
Data hold from write time
tDH
End write to output low-Z
tOW
LB, UB valid to end of write
tBW
1. Voltage range is 3.0V~3.6V for commercial and industrial product.
55ns1)
Min Max
55 -
- 55
- 55
- 25
- 25
10 -
5-
5-
10 -
0 20
0 20
0 20
55 -
45 -
0-
45 -
40 -
0-
0 20
25 -
0-
5-
45 -
Speed Bins
70ns
Min Max
70 -
- 70
- 70
- 35
- 35
10 -
5-
5-
10 -
0 25
0 25
0 25
70 -
60 -
0-
60 -
55 -
0-
0 25
30 -
0-
5-
60 -
85ns
Min Max
85 -
- 85
- 85
- 40
- 40
10 -
5-
5-
10 -
0 25
0 25
0 25
85 -
70 -
0-
70 -
60 -
0-
0 25
35 -
0-
5-
70 -
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
DATA RETENTION CHARACTERISTICS
Item
Symbol
Test Condition
Vcc for data retention
VDR CSVcc-0.2V
Data retention current
K6X4016T3F-B
IDR Vcc=3.0V, CSVcc-0.2V K6X4016T3F-F
K6X4016T3F-Q
Data retention set-up time
Recovery time
tSDR
tRDR
See data retention waveform
Min Typ Max Unit
2.0 - 3.6 V
10 µA
- - 10 µA
20 µA
0- -
ms
5- -
5 Revision 1.0
August 2003

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