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PDF K6R1008V1D Data sheet ( Hoja de datos )
| Número de pieza | K6R1008V1D | |
| Descripción | 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. | |
| Fabricantes | Samsung semiconductor | |
| Logotipo |  |
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K6R1008V1D
PRELIMINARY
for AT&T
CMOS SRAM
Document Title
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating)
Operated at Commercial and Industrial Temperature Ranges.
Revision History
Rev.No.
Rev. 0.0
Rev. 0.1
Rev. 0.2
Rev. 1.0
History
Initial document.
Speed bin modify
Current modify
1. Delete 12ns speed bin.
2. Change Icc for Industrial mode.
Item
Previous
ICC(Industrial)
8ns
10ns
100mA
85mA
Current
90mA
75mA
Draft Data
Remark
May. 11. 2001
June. 18. 2001
September. 9. 2001
Preliminary
Preliminary
Preliminary
December. 18. 2001 Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
Revision 1.0
December 2001
1 page  
K6R1008V1D
PRELIMINARY
for AT&T
CMOS SRAM
AC CHARACTERISTICS(TA=0 to 70°C, VCC=3.3±0.3V, unless otherwise noted.)
TEST CONDITIONS*
Parameter
Value
Input Pulse Levels
0V to 3V
Input Rise and Fall Times
3ns
Input and Output timing Reference Levels
1.5V
Output Loads
See below
* The above test conditions are also applied at industrial temperature range.
Output Loads(A)
DOUT
ZO = 50Ω
RL = 50Ω
VL = 1.5V
30pF*
Output Loads(B)
for tHZ, tLZ, tWHZ, tOW, tOLZ & tOHZ
DOUT
353Ω
+3.3V
319Ω
5pF*
* Capacitive Load consists of all components of the
test environment.
* Including Scope and Jig Capacitance
READ CYCLE*
Parameter
Symbol
Read Cycle Time
Address Access Time
Chip Select to Output
Output Enable to Valid Output
Chip Enable to Low-Z Output
Output Enable to Low-Z Output
Chip Disable to High-Z Output
Output Disable to High-Z Output
Output Hold from Address Change
Chip Selection to Power Up Time
Chip Selection to Power DownTime
tRC
tAA
tCO
tOE
tLZ
tOLZ
tHZ
tOHZ
tOH
tPU
tPD
K6R1008V1D-08
Min Max
8-
-8
-8
-4
3-
0-
04
04
3-
0-
-8
* The above parameters are also guaranteed at industrial temperature range.
K6R1008V1D-10
Min Max
10 -
- 10
- 10
-5
3-
0-
05
05
3-
0-
- 10
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
-5-
Revision 1.0
December 2001
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet K6R1008V1D.PDF ] | |
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