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PDF K64004C1D Data sheet ( Hoja de datos )

Número de pieza K64004C1D
Descripción 1Mx4 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.
Fabricantes Samsung semiconductor 
Logotipo Samsung semiconductor Logotipo



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K6R4004C1D
Document Title
1Mx4 Bit High Speed Static RAM(5.0V Operating).
Operated at Commercial and Industrial Temperature Ranges.
Revision History
PRELIMINARY
CMOS SRAM
RevNo.
Rev. 0.0
Rev. 0.1
History
Initial release with Preliminary.
Change Icc. Isb and Isb1
Item
ICC(Commercial)
ICC(Industrial)
ISB
ISB1
10ns
12ns
15ns
10ns
12ns
15ns
Previous
90mA
80mA
70mA
115mA
100mA
85mA
30mA
10mA
Current
65mA
55mA
45mA
85mA
75mA
65mA
20mA
5mA
Draft Data
Remark
September. 7. 2001 Preliminary
November, 3. 2001 Preliminary
Rev. 0.2
Rev. 0.3
Rev. 1.0
1. Correct AC parameters : Read & Write Cycle mA
2. Delete Low Ver.
3. Delete Data Retention Characteristics
1. Delete 15ns speed bin.
2. Change Icc for Industrial mode.
Item
ICC(Industrial)
10ns
12ns
Previous
85mA
75mA
Current
75mA
65mA
1. Final datasheet release.
2. Delete 12ns speed bin.
3. Delete UB,LB releated AC characteristics and timing diagram.
4. Correct Read Cycle time waveform(2).
November, 3. 2001 Preliminary
December, 18. 2001 Preliminary
July, 09, 2002
Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
Rev 1.0
July 2002

1 page




K64004C1D pdf
K6R4004C1D
PRELIMINARY
CMOS SRAM
AC CHARACTERISTICS(TA=0 to 70°C, VCC=5.0V±10%, unless otherwise noted.)
TEST CONDITIONS*
Parameter
Input Pulse Levels
Input Rise and Fall Times
Input and Output timing Reference Levels
Output Loads
Value
0V to 3V
3ns
1.5V
See below
* The above test conditions are also applied at industrial temperature range.
Output Loads(A)
DOUT
ZO = 50
Output Loads(B)
for tHZ, tLZ, tWHZ, tOW, tOLZ & tOHZ
RL = 50
VL = 1.5V
30pF*
DOUT
255
+5.0V
480
5pF*
* Capacitive Load consists of all components of the
test environment.
* Including Scope and Jig Capacitance
READ CYCLE*
Parameter
Symbol
Read Cycle Time
Address Access Time
Chip Select to Output
Output Enable to Valid Output
Chip Enable to Low-Z Output
Output Enable to Low-Z Output
Chip Disable to High-Z Output
Output Disable to High-Z Output
Output Hold from Address Change
Chip Selection to Power Up Time
Chip Selection to Power DownTime
tRC
tAA
tCO
tOE
tLZ
tOLZ
tHZ
tOHZ
tOH
tPU
tPD
Min
10
-
-
-
3
0
0
0
3
0
-
* The above parameters are also guaranteed at industrial temperature range.
K6R4004C1D-10
Max
-
10
10
5
-
-
5
5
-
-
10
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
-5-
Rev 1.0
July 2002

5 Page










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