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PDF K4S640832E-TL75 Data sheet ( Hoja de datos )
| Número de pieza | K4S640832E-TL75 | |
| Descripción | 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL | |
| Fabricantes | Samsung semiconductor | |
| Logotipo |  |
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K4S640832E
CMOS SDRAM
64Mbit SDRAM
2M x 8Bit x 4 Banks
Synchronous DRAM
LVTTL
Revision 0.1
Sept. 2001
* Samsung Electronics reserves the right to change products or specification without notice.
Rev.0.1 Sept. 2001
1 page  
K4S640832E
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, TA = 0 to 70°C)
Parameter
Symbol
Test Condition
Operating current
(One bank active)
Burst length = 1
ICC1 tRC ≥ tRC(min)
IO = 0 mA
Precharge standby current in
power-down mode
Precharge standby current in
non power-down mode
ICC2P CKE ≤ VIL(max), tCC = 10ns
ICC2PS CKE & CLK ≤ VIL(max), tCC = ∞
ICC2N
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
ICC2NS
CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞
Input signals are stable
Active standby current in
power-down mode
Active standby current in
non power-down mode
(One bank active)
ICC3P CKE ≤ VIL(max), tCC = 10ns
ICC3PS CKE & CLK ≤ VIL(max), tCC = ∞
ICC3N
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
ICC3NS
CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞
Input signals are stable
Operating current
(Burst mode)
IO = 0 mA
ICC4
Page burst
4Banks Activated
tCCD = 2CLKs
Refresh current
Self refresh current
ICC5 tRC ≥ tRC(min)
ICC6 CKE ≤ 0.2V
C
L
CMOS SDRAM
Version
Unit Note
- 75 - 1H - 1L
75 70 70 mA 1
1 mA
1
15
mA
6
3
mA
3
25
mA
15
115 95 95 mA 1
135 125 125 mA 2
1 mA 3
400 uA 4
Notes : 1. Measured with outputs open.
2. Refresh period is 64ms.
3. K4S640832E-TC**
4. K4S640832E-TL**
5. Unless otherwise noted, input swing IeveI is CMOS(VIH /VIL=VDDQ/VSSQ)
Rev.0.1 Sept. 2001
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet K4S640832E-TL75.PDF ] | |
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